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Ferroelectric enhanced van der Waals heterojunction polarization detector and preparation method thereof

A detector and heterojunction technology, applied in the field of polarized light detection, can solve the problem of high power consumption

Pending Publication Date: 2020-02-18
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for ordinary gate dielectrics in phototransistors, in order to make the detector work in an optimal state, it is usually necessary to continuously apply an external electric field, resulting in large power consumption

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  • Ferroelectric enhanced van der Waals heterojunction polarization detector and preparation method thereof
  • Ferroelectric enhanced van der Waals heterojunction polarization detector and preparation method thereof
  • Ferroelectric enhanced van der Waals heterojunction polarization detector and preparation method thereof

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Embodiment 1

[0054] In this embodiment, a ferroelectric enhanced van der Waals heterojunction polarization detector and its preparation method are provided. The structure of the detector is as follows figure 1 shown.

[0055] The detector consists of a substrate 1 , a first layer of two-dimensional semiconductor 2 , a second layer of two-dimensional semiconductor 3 , metal source and drain electrodes 4 and 5 , a ferroelectric functional layer 6 , and a translucent metal electrode 7 from bottom to top.

[0056] In embodiment 1, substrate 1 is a silicon / silicon dioxide substrate, and the silicon dioxide thickness is 285 nanometers; the first layer of two-dimensional semiconductor is molybdenum disulfide, and its thickness is 5 nanometers; the second layer of two-dimensional semiconductor is tin oxide germanium with a thickness of 10 nanometers; the metal source 4 and the metal drain 5 are chromium gold with a thickness of 20 nanometers; the ferroelectric functional layer 6 is 100 nanometers;...

Embodiment 2

[0058] In this embodiment, a ferroelectric enhanced van der Waals heterojunction polarization detector and its preparation method are provided. The structure of the detector is as follows figure 1 shown.

[0059] The detector consists of a substrate 1 , a first layer of two-dimensional semiconductor 2 , a second layer of two-dimensional semiconductor 3 , metal source and drain electrodes 4 and 5 , a ferroelectric functional layer 6 , and a translucent metal electrode 7 from bottom to top.

[0060] In embodiment 2, substrate 1 is a silicon / silicon dioxide substrate, and the thickness of silicon dioxide is 285 nanometers; the first layer of two-dimensional semiconductor is molybdenum disulfide, and its thickness is 10 nanometers; germanium with a thickness of 80 nanometers; the metal source 4 and the metal drain 5 are chromium gold with a thickness of 80 nanometers; the ferroelectric functional layer 6 is 200 nanometers; the translucent metal electrode is aluminum with a thickne...

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Abstract

The invention discloses a ferroelectric enhanced van der Waals heterojunction polarization detector and a preparation method thereof. The ferroelectric enhanced van der Waals heterojunction polarization detector is characterized by comprising a substrate, a van der Waals heterojunction composed of two two-dimensional semiconductors, a metal source-drain electrode, a ferroelectric thin film, and atranslucent metal gate electrode in order from bottom to top. The preparation method comprises steps: firstly, preparing a two-dimensional semiconductor on the substrate; transferring another anisotropic two-dimensional semiconductor on this basis; combining the two semiconductors by Van der Waals force; preparing a metal electrode by electron beam lithography and lift-off technology; spin-coatinga ferroelectric polymer film to prepare a translucent metal electrode; and finally forming a ferroelectric local field enhanced polarization detector. Different from a heterojunction photoelectric detector, the structure can realize a polarization detector with a high dichroism ratio, low power consumption and fast response.

Description

technical field [0001] The invention relates to the field of polarized light detection, in particular to a van der Waals heterojunction polarization detector utilizing ferroelectric polarization electric field enhancement. Background technique [0002] As an extension of the light intensity detector, the polarization detector has the ability of intelligent recognition, which can improve the accuracy of target recognition and facilitate the accurate extraction of target information in complex backgrounds. It has important application value in the fields of aerospace remote sensing, satellite navigation, bionic vision, etc. . Based on the current polarization detection technology, it is mainly to add complex optical structures to the detection system or combine metal nano-gratings to realize the polarization absorption of light, which has problems such as complex structure, slow response, and low spatial resolution. [0003] Emerging two-dimensional materials include graphene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/113H01L31/0224H01L31/0336H01L31/18G01J4/00
CPCH01L31/1136H01L31/0336H01L31/022408H01L31/18G01J4/00Y02P70/50
Inventor 王建禄陈艳王旭东胡伟达沈宏林铁孟祥建褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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