Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for improving the adhesion of metal film layer on high dielectric constant ceramic substrate

A high dielectric constant, ceramic substrate technology, used in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor metal adhesion, improve adhesion, increase operation difficulty, and improve roughness. Effect

Active Publication Date: 2022-04-22
XIAN INSTITUE OF SPACE RADIO TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem solved by the present invention is: to overcome the deficiencies of the prior art, to provide a method for improving the adhesion of the metal film layer of the high dielectric constant ceramic substrate, and to solve the problem of the metal adhesion of the high dielectric constant substrate in the thin film field The problem of poor quality provides the possibility for the wide application of this type of substrate material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for improving the adhesion of metal film layer on high dielectric constant ceramic substrate
  • A method for improving the adhesion of metal film layer on high dielectric constant ceramic substrate
  • A method for improving the adhesion of metal film layer on high dielectric constant ceramic substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] Ultraviolet laser roughening is the use of a specific ultraviolet laser, through a series of operations such as controlling laser parameters, using the energy of the ultraviolet laser, on the surface of the substrate to be processed, shallowly etches densely arranged fine grooves in a straight line , after two times of superimposed etching in the horizontal and vertical directions, a roughened structure with tooth-shaped bumps and ups and downs is etched on the surface of the substrate to achieve the effect of destroying the brightness and smoothness of the substrate surface. After high-temperature calcination, the surface of the roughened substrate is slightly melted, and the sharp structure at the "peaks" and "valleys" of the concave-convex undulating structure is appropriately weakened, so that the roughened structure after ultraviolet laser etching is obtained to a certain extent. Lubrication". Finally, a roughened surface with a uniform roughening effect and a Ra va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
diameteraaaaaaaaaa
distanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for improving the adhesion of a metal film layer of a high dielectric constant ceramic substrate, belonging to the technical field of fine processing of microwave integrated circuits. The surface layer of the above-mentioned substrate is roughened by array scribe etching with a specific performance ultraviolet laser, and the above-mentioned roughened substrate is calcined under high temperature conditions by using a specific temperature curve, so that the roughness obtained on the surface of the substrate is The Ra value is stable in the range of 0.25-0.3mm, and has good roughening uniformity, which improves the adhesion between the metal film layer and the substrate in the process of making microwave integrated thin film circuits when the substrate with high dielectric constant is used as the substrate.

Description

technical field [0001] The invention relates to a method for improving the adhesion of a metal film layer of a high dielectric constant ceramic substrate, which belongs to the technical field of fine processing of microwave integrated circuits. The high dielectric constant ceramic substrate refers to a TD-36 substrate or an SF210K substrate. Background technique [0002] The circuit pattern of microwave integrated circuit thin film ceramic substrate (abbreviated as MIC chip) has a multi-layer metal structure, and the general substrate is hard ceramics. Because the metal film layer needs to withstand the microwave assembly process, which involves various external effects such as welding, gold wire bonding, gold ribbon bonding, and conductive adhesive bonding, the requirements for the adhesion of the metal film layer are very high. The two most important indicators include: 1. It is required that the destructive tensile value of 250μm gold ribbon pressure welding is above 50g;...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02H01L21/02518H01L21/02057
Inventor 曲媛张楠杨士成武江鹏宋丽萍左春娟雷莎
Owner XIAN INSTITUE OF SPACE RADIO TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com