Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and preparation device for high-purity gallium oxide

A preparation device and gallium oxide technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of long process flow, complex process, unfavorable preparation of gallium oxide, etc., to improve reaction efficiency, Agitate for full effect

Inactive Publication Date: 2019-12-31
CNBM CHENGDU OPTOELECTRONICS MATERIAL
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem is that among the above-mentioned preparation methods, the three-stage electrolysis method and potassium sulfate followed by crystallization and purification method have a long process flow, time-consuming and complicated process, which is not conducive to the large-scale and efficient preparation of gallium oxide; microwave hydrothermal method is difficult to complete the reaction, easy There are impurities remaining, and the purity of gallium oxide cannot be guaranteed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and preparation device for high-purity gallium oxide
  • Preparation method and preparation device for high-purity gallium oxide

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] Please refer to figure 1 , the present embodiment provides a preparation method of high-purity gallium oxide, comprising the following steps:

[0031] Take metal gallium of 4N purity and mix it with deionized water, the mass ratio of gallium to water is 1:2-1:8;

[0032] Put the mixture of gallium and water into a high-pressure reaction vessel, keep stirring at a temperature of 150-250°C, and perform a hydrothermal reaction for 1-1.5 hours to generate a mixture of gallium oxyhydroxide and gallium oxide;

[0033] The mixture is filtered, and the filtered solid is dried; the filtrate is mixed with deionized water and used as a raw material;

[0034] The solid mixture is calcined at 700-800°C for 1-2h, and the gallium oxyhydroxide decomposes to form gallium oxide.

[0035] The 4N purity described in this application is the representation method of the purity of the equivalent reagent, that is, the purity of 99.99%.

[0036] When metal gallium and high-temperature water ...

Embodiment 1

[0043] Take 4N pure gallium metal and mix it with deionized water, the mass ratio of gallium to water is 1:2;

[0044] Put the mixture of gallium and water into a high-pressure reaction vessel, continuously stir at 150°C, and perform a hydrothermal reaction for 1.5 hours to generate a mixture of gallium oxyhydroxide and gallium oxide;

[0045] The mixture is filtered, and the filtered solid is dried; the filtrate is mixed with deionized water and used as a raw material;

[0046] The solid mixture was calcined at 700°C for 2 hours, and gallium oxyhydroxide was decomposed to form gallium oxide.

Embodiment 2

[0048] Take metal gallium with 4N purity and mix it with deionized water, the mass ratio of gallium to water is 1:4;

[0049] Put the mixture of gallium and water into a high-pressure reaction vessel, continuously stir at 180°C, and perform a hydrothermal reaction for 1.4 hours to generate a mixture of gallium oxyhydroxide and gallium oxide;

[0050] The mixture is filtered, and the filtered solid is dried; the filtrate is mixed with deionized water and used as a raw material;

[0051] The solid mixture was calcined at 730°C for 1.8h, and gallium oxyhydroxide was decomposed to form gallium oxide.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method for high-purity gallium oxide. The method includes the following steps: mixing metal gallium and water for a reaction to generate a mixture; filtering themixture, and performing drying; and performing calcination on the mixture to generate the gallium oxide. According to method, gallium oxide hydroxide and gallium oxide are prepared through ahigh-temperature hydrothermal reaction, drying is performed and calcination is performed to make the gallium oxide hydroxide decomposed into gallium oxide and water, and after the water is evaporated and escaped, the high-purity gallium oxide is obtained. The present application also provides a preparation device for preparing the high-purity gallium oxide.

Description

technical field [0001] The invention relates to the field of gallium oxide preparation, in particular to a preparation method and a preparation device of high-purity gallium oxide. Background technique [0002] Gallium oxide is an excellent wide-bandgap semiconductor with excellent electrical and optical properties. It is used in the preparation of gas sensors, ultraviolet detectors, thin-film electroluminescent devices, display devices, and transparent conductive films, and shows broad development prospects. and application space. High-purity gallium oxide is the raw material for preparing gadolinium gallium garnet, and gadolinium gallium garnet single crystal is an ideal substrate material for liquid phase epitaxy of YIG (yttrium iron garnet) and YIG-like magneto-optical thin films. [0003] At present, there are many preparation methods of high-purity gallium oxide, for example: using gallium as raw material, high-purity gallium oxide is prepared by three-stage electroly...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G15/00
CPCC01G15/00C01P2006/80
Inventor 南长斌彭寿潘锦功傅干华马立云郑林蒋猛
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com