Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device

Abstract

The invention relates to a multi-quantum well structure, a photoelectric device epitaxial wafer and a photoelectric device. The multi-quantum well structure is composed of quantum well layers and quantum barrier layers which grow alternately, and each quantum well layer and each quantum barrier layer are of an uneven structure. The quantum well layer and the quantum barrier layer of the multi-quantum well structure are arranged to be of structures with uneven components and uneven structures. The photorecombination efficiency, the internal quantum efficiency and the luminous efficiency of carriers are improved, and when the structure is applied to a photoelectric device epitaxial wafer and a photoelectric device, preparation of a high-power light-emitting diode, a high-power light-emittinglaser and a high-power light-emitting detector device is realized.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a multi-quantum well structure, an optoelectronic device epitaxial wafer and a photoelectric device. Background technique [0002] Ultraviolet Light Emitting Diode (UVLED) is mostly made of third-generation semiconductor materials. InAlGaN or BAlGaN materials have the characteristics of wide band gap and direct band gap. InAlGaN Or BAlGaN-based UVLEDs have broad application prospects in the fields of sterilization, disinfection, medical treatment and non-line-of-sight optical communication. AlGaN-based UV LEDs can achieve continuously adjustable emission wavelengths in the range of 200nm-360nm, and can be mass-produced on cheap silicon, sapphire, gallium nitride, aluminum nitride and silicon carbide substrates by heteroepitaxial methods. [0003] Existing AlGaN-based UVLEDs often use a multi-quantum well structure with uniform composition and flat structure as the active...

AI Technical Summary

Problems solved by technology

[0003] Existing AlGaN-based UVLEDs often use a multi-quantum well structure with uniform composition and flat structure as the active region of the device (ie, the light-emitting region or the electron-hole recombination region), and the photon recombination efficiency of carriers in the two-dimensional quantum well structure Low, resulting in low internal quantum efficiency, external quantum efficiency and luminous efficiency of the device, and low electro-optical conversion efficiency of light-emitting diodes

Similar to light-emitting diodes, other optoelectronic devices such as light-emitting lasers and light-emitting detectors have problems with low internal quantum efficiency, external quantum efficiency, luminous efficiency, and low electro-optic conversion efficiency.

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