Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible indium zinc oxide thin film transistor and manufacturing method thereof

A thin film transistor, indium zinc oxide technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of difficult to use high-frequency devices, low mobility, etc., achieve thin structure, wide application prospects, and improve control. effect of ability

Inactive Publication Date: 2019-12-13
TIANJIN UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a flexible metal oxide thin film transistor and its preparation method, which solves the problems of low mobility and difficulty in being used in high-frequency devices in the traditional flexible organic thin film transistors in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible indium zinc oxide thin film transistor and manufacturing method thereof
  • Flexible indium zinc oxide thin film transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific examples and with reference to the accompanying drawings.

[0027] like figure 1 As shown, the present invention is a kind of flexible indium zinc oxide thin film transistor, and its structure is as follows from bottom to top: flexible substrate (PET) 1, aluminum film (Al) 2 as grid, as gate insulating layer 3 through anodic oxidation Aluminum oxide film (Al 2 o 3 ), indium zinc oxide film (IZO) 4 and indium tin oxide (ITO) drain 6 source 5 electrodes, the top is covered with a layer of silicon dioxide (SiO 2 ) 7 as the device passivation layer.

[0028] The specific production process is as follows:

[0029] a. Choose PET flexible material as the substrate, first put the PET into a beaker filled with acetone solution, then clean it in an ultrasonic cleaner for 5 minutes, and the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a flexible metal oxide thin film transistor and a manufacturing method thereof. A PET substrate is plated with an aluminum thin film and an aluminum oxide thin film formed through anodic oxidation, the aluminum thin film and the aluminum oxide thin film serve as a gate electrode and a gate electrode insulating layer respectively, an indium zinc oxide thin film is deposited,an indium tin oxide (ITO) source-drain electrode is prepared through a lift-off method, and finally silicon dioxide is deposited to serve as a device passivation layer. The flexible metal oxide thinfilm transistor is suitable for a flexible integrated circuit, and the transistor has good performance and high working frequency. Moreover, the device has the advantages of light and thin structure,bendability and foldability, strong mechanical shock resistance and the like, and has a wide application prospect in the fields of flexible display equipment, intelligent wearing and photoelectric devices.

Description

technical field [0001] The invention relates to a flexible metal oxide thin film transistor and a preparation method thereof. Background technique [0002] With its unique ductility and high-efficiency and low-cost manufacturing process, flexible electronic devices have broad application prospects in information, energy, medical, national defense and other fields. In recent years, flexible electronic technology has shown a rapid development trend. The research on flexible electronic devices that can withstand large deformations such as tension, compression, and bending has become a research hotspot in the fields of electronics, mechanics, materials, and physics. It represents a recent development direction of a new generation of semiconductor devices. It not only has the performance of traditional rigid circuit board-based systems, but also has the performance of being stretched like a rubber band, twisted like a rope, and folded like a paper. However, traditional flexible...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L29/423H01L29/49
CPCH01L29/42384H01L29/4908H01L29/66969H01L29/7869
Inventor 秦国轩刘家立
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com