LED epitaxial wafer, manufacturing method thereof and semiconductor device
A technology of LED epitaxial wafers and manufacturing methods, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of small-sized chips such as increased current density, hindered hole transmission, and sudden drop in efficiency, so as to reduce the polarization electric field , Improve luminous efficiency and reduce the effect of sudden drop in efficiency
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[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0042] As mentioned in the background technology, in recent years, III-V nitrides have been widely used in the fields of electronics and optics due to their excellent physical and chemical properties (large band gap, high breakdown electric field, high electron saturation mobility, etc.) . Among them, the blue-green light-emitting diode with GaN base as the main material has made great progress in lighting, display and digital. However, with the current devel...
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