Inverted four-junction solar cell anti-displacement irradiation reinforcing method based on deep ion implantation mode
An ion implantation and solar cell technology, applied in the field of microelectronics, can solve the problems of displacement radiation damage, poor anti-displacement irradiation ability, affecting the performance parameters of solar cells, etc. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0042] Specific implementation mode one: the following combination figure 1 To illustrate this embodiment, the method for strengthening the anti-displacement radiation of an inverted four-junction solar cell based on the deep ion implantation method described in this embodiment, the specific process of the strengthening method is as follows:
[0043] S1. According to the structural parameters of the inverted four-junction solar cell, simulate implanting ions into the fourth-junction active region and the third-junction active region of the inverted four-junction solar cell to obtain the fourth-junction active region and the third-junction active region respectively. The ion energy and range information of implanted ions in the region;
[0044] S2. Simulate the I-V characteristics of the fourth junction active region without implanted ions and simulated implanted ions respectively, change the amount of implanted ions, so that the variation of the I-V characteristics after simul...
PUM
![No PUM](https://static-eureka-patsnap-com.libproxy1.nus.edu.sg/ssr/23.2.0/_nuxt/noPUMSmall.5c5f49c7.png)
Abstract
Description
Claims
Application Information
![application no application](https://static-eureka-patsnap-com.libproxy1.nus.edu.sg/ssr/23.2.0/_nuxt/application.06fe782c.png)
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com