Beta radiation Volta effect nuclear battery based on silicon carbide PN junction

Abstract

The invention discloses a beta radiation Volta effect nuclear battery based on a silicon carbide PN junction. The basic structure of the nuclear battery comprises a pure beta radiation source, a silicon carbide PN junction device and a battery shell. A silicon carbide PN junction structure is prepared by using a microwave plasma chemical vapor deposition technique and an ion implantation technique; an ohmic contact electrode is fabricated by using semiconductor micromachining and electron beam evaporation coating; and then the pure beta source is coupled and loaded to the surface of the silicon carbide PN junction device to construct an apparatus that converts the decay energy of the pure beta source into electrical energy. A technical scheme provided by the invention is simple, and is beneficial for preparing the thin film type beta radiation Volta effect nuclear battery with high energy conversion efficiency, stable output performance, long working time and strong anti-irradiation performance; and the nuclear battery has important application value.

Description

technical field [0001] The invention relates to a device for converting decay energy of radionuclides into electric energy by using semiconductor devices, and belongs to the technical field of nuclear energy utilization. Background technique [0002] In recent years, MEMS devices in MEMS have developed rapidly, but the further development of MEMS is limited by the lack of micro power supplies. The requirements of micro-electromechanical systems for micro-power supplies generally include: miniaturization, integration, long working hours, and strong environmental adaptability. Traditional micro batteries mainly include micro fuel cells, micro chemical batteries, micro solar cells, micro internal combustion engines, etc. Studies have shown that: compared with traditional micro-batteries, β-radiation voltaic effect nuclear batteries have light weight, miniaturization, integration, long service life, high energy density, stable output performance, low maintenance service frequen...

AI Technical Summary

Problems solved by technology

Generally, the manufacturing process of this kind of device is less difficult, and the diffusion region without field strength is almost perfect, but it is not conducive to improving the diffusion length of minority carriers, and the charge collection efficiency is low; the second is to use the depletion layer of semiconductor PN junction devices region as an effective radiation energy absorption region, and then use the built-in electric field in this region to separate the radiant electron-hole pairs

Images