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AgGaS2-based intermediate-band semiconductor material and preparation method thereof

A semiconductor and intermediate zone technology, which is applied in the field of AgGaS2-based intermediate zone semiconductor materials and their preparation, can solve the problems of lack of semiconductor materials, inability to meet the use requirements of high-efficiency solar cells, low dispersion, etc., and achieves improved photoelectric conversion efficiency and high degree of automation. , the effect of high safety

Active Publication Date: 2019-11-08
SHANGHAI DIANJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At this stage, semiconductor materials with intermediate energy bands that can be applied to the photovoltaic field are scarce, and AgGaS 2 It is an infrared nonlinear optical material with excellent performance. It has the characteristics of wide light transmission band, large nonlinear optical coefficient, suitable birefringence, and low dispersion. AgGaS 2 With a bandgap of 2.73eV, it is very suitable as a parent material for high-efficiency intermediate-band solar absorbing semiconductors, while AgGaS 2 The optical absorption ability of the base intermediate band semiconductor material is still not enough for the use of high-efficiency solar cells

Method used

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Embodiment 1

[0031] AgGaS 2 It is a compound with a chalcopyrite structure, and it has a good light-absorbing ability, and is suitable as a parent compound for high-efficiency intermediate-band semiconductor materials. In this embodiment, AgGaS with excellent photoelectric performance 2 It is the parent semiconductor of the intermediate band, and the intrinsic semiconductor AgGaS is doped with the group VI element Sn 2 Ga sites, introducing an intermediate impurity band into the band gap of the intrinsic semiconductor can effectively improve the AgGaS 2 The optical absorption ability makes it have better optical absorption and improves AgGaS 2 Comprehensive performance of semiconductors in the field of solar cells.

[0032] The electronic density of states was calculated using the first-principles calculation method. AgGaS 2 It is a chalcopyrite structure compound with 16 atoms in the tetragonal unit cell. The doping calculation model adopts a 2×2×2 supercell model, which contains 64...

Embodiment 2

[0046] a AgGaS 2 A method for preparing a base intermediate band semiconductor material, specifically comprising the following steps:

[0047] (1) Ag powder, Ga block, S powder and Sn powder (all with a purity of 5N) are vacuum-packaged in a quartz glass tube according to the stoichiometric ratio;

[0048] (2) Carry out primary sintering of the quartz glass tube, the temperature of the primary sintering is 800° C., and the sintering time is 80 hours. The obtained primary sintered sample is ground and vacuum-packed in the quartz glass tube again;

[0049] (3) The quartz glass tube is subjected to secondary sintering, the temperature of the secondary sintering is 800°C, and the sintering time is 80 hours, and the obtained secondary sintering sample is ground to obtain the product AgGa 1-x sn x S 2 (x=0.01).

[0050] The quartz glass tubes in step (2) and step (3) are sintered in a muffle furnace, and ground in an agate mortar.

Embodiment 3

[0052] a AgGaS 2 A method for preparing a base intermediate band semiconductor material, specifically comprising the following steps:

[0053] (1) Ag powder, Ga block, S powder and Sn powder (all with a purity of 5N) are vacuum-packaged in a quartz glass tube according to the stoichiometric ratio;

[0054] (2) Carry out primary sintering of the quartz glass tube, the temperature of the primary sintering is 900° C., and the sintering time is 60 hours, and the obtained primary sintering sample is ground and vacuum-packed in the quartz glass tube again;

[0055] (3) The quartz glass tube is subjected to secondary sintering, the temperature of the secondary sintering is 900°C, and the sintering time is 60 hours, and the obtained secondary sintered sample is ground to obtain the product AgGa 1-x sn x S 2 (x=0.04).

[0056] The quartz glass tubes in step (2) and step (3) are sintered in a muffle furnace, and ground in an agate mortar.

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Abstract

The invention relates to an AgGaS2-based intermediate-band semiconductor material and a preparation method thereof. According to the invention, AgGaS2 with excellent photoelectric performance is usedas an intermediate-band mother semiconductor; the Ga site of an intrinsic semiconductor AgGaS2 is doped with a group-VI element namely Sn; through introduction of an intermediate impurity band into the band gap of the intrinsic semiconductor, the optical absorption capacity of the AgGaS2 can be effectively improved; and through electronic state density analysis, the introduced impurity band is formed mainly by hybridization of elements Sn-5s and S-3p. The novel semiconductor with an intermediate energy band provided by the invention has the ability of broadening an absorption spectrum, and isexpected to be applied in the field of high-efficiency solar cells.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an AgGaS 2 Base intermediate band semiconductor material and its preparation method. Background technique [0002] Semiconductor science and technology have driven the development and innovation of new materials, new devices, new technologies and new interdisciplinary subjects, and have caused revolutionary changes and progress in many technical fields, and have become closely related to national economic development, social progress and national defense security. important science and technology. [0003] With the worsening of energy crisis and other issues, new energy sources such as solar energy and wind energy have been more and more widely used. Solar cells have experienced more than half a century of development since their birth. In order to improve the efficiency of cells, various new materials and new structures have been proposed. Photovoltaic power g...

Claims

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Application Information

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IPC IPC(8): C01G15/00H01L31/032H01L31/18
CPCC01G15/006H01L31/0321H01L31/18C01P2002/54C01P2002/72C01P2006/40C01P2006/60Y02P70/50
Inventor 张栋栋陈平赵春燕
Owner SHANGHAI DIANJI UNIV
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