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A strontium titanate semiconductor material doped with ytterbium and thulium and its preparation method and application

A strontium titanate and semiconductor technology, applied in the field of thulium strontium titanate semiconductor materials and its preparation, and doping with ytterbium, can solve problems such as difficult infrared light utilization, achieve good repeatability, environmental friendliness, and improve efficiency

Active Publication Date: 2022-05-13
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Among many catalysts, strontium titanate has become a very good choice of photocatalyst due to its stable properties and green environment. use of light

Method used

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  • A strontium titanate semiconductor material doped with ytterbium and thulium and its preparation method and application
  • A strontium titanate semiconductor material doped with ytterbium and thulium and its preparation method and application
  • A strontium titanate semiconductor material doped with ytterbium and thulium and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Example 1: SrTiO 3 : Preparation of Yb, Tm.

[0049] (1) 319.32mg TiO 2 , 584.5752mg SrCO 3 , 13.6mg Yb 2 o 3 , 0.96415mg Tm 2 o 3 (according to SrTiO 3 :Yb 3+ ,Tm 3+ Mole ratio 99:8 / 9:1 / 9 ratio) into the agate mortar.

[0050] (2) Add 7.4436 g of NaCl to the agate mortar of step (1), grind in cis for 20 minutes, and mix the raw materials evenly.

[0051] (3) Transfer the homogeneously mixed raw materials in step (2) to a platinum pot and compact them.

[0052] (4) Put the platinum pot in step (3) into a tube furnace, and calcinate at 1000° C. for 3 hours.

[0053] (5) After the sample calcined in step (4) was cooled to room temperature by the tube furnace program, it was taken out, ultrasonically cleaned 6 times with deionized water, centrifuged, and dried overnight in an oven at 60°C to obtain SrTiO 3 : Yb, Tm. The X-ray diffraction pattern of the sample is as figure 1 shown, without Yb 2 o 3 、Tm 2 o 3 The characteristic peak appears, indicating tha...

Embodiment 2

[0055] (1) 319.32mg TiO 2 , 584.5752mg SrCO 3 , 13.6mg Yb 2 o 3 , 0.96415mg Tm 2 o 3 (according to SrTiO 3 :Yb 3+ ,Tm 3+ Mole ratio 99:8 / 9:1 / 9 ratio) into the agate mortar.

[0056] (2) Add 7.4436 g of NaCl to the agate mortar of step (1), grind in cis for 20 minutes, and mix the raw materials evenly.

[0057] (3) Transfer the homogeneously mixed raw materials in step (2) to a platinum pot and compact them.

[0058] (4) Put the platinum pot in step (3) into a tube furnace, and calcinate at 900° C. for 3 hours.

[0059] (5) The sample calcined in step (4) was cooled to room temperature in a tube furnace program, then taken out, ultrasonically cleaned 6 times with deionized water, centrifuged, and dried overnight in an oven at 60°C to obtain a solid material. After the sample is irradiated with a 980nm laser, it does not emit light, indicating that the reaction temperature has not been reached, and the doping has failed.

Embodiment 3

[0061] (1) 319.32mg TiO 2 , 584.5752mg SrCO 3 , 351.12528mg Yb 2 o 3 、38.2mg Tm 2 o 3 (according to SrTiO 3 :Yb 3+ ,Tm 3+ Mole ratio 80:18:2 ratio) into the agate mortar.

[0062] (2) Add 7.4436 g of NaCl to the agate mortar of step (1), grind in cis for 20 minutes, and mix the raw materials evenly.

[0063] (3) Transfer the homogeneously mixed raw materials in step (2) to a platinum pot and compact them.

[0064] (4) Put the platinum pot in step (3) into a tube furnace, and calcinate at 1000° C. for 3 hours.

[0065] (5) The sample calcined in step (4) was cooled to room temperature in a tube furnace program, then taken out, ultrasonically cleaned 6 times with deionized water, centrifuged, and dried overnight in an oven at 60°C to obtain a solid material. The X-ray diffraction pattern of the sample is as Image 6 As shown in , there are miscellaneous peaks, indicating that the doping has not been successful and is not the target product.

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Abstract

The disclosure provides a strontium titanate semiconductor material doped with ytterbium and thulium and its preparation method and application. The preparation method is: making TiO 2 , SrCO 3 , Yb 2 o 3 、Tm 2 o 3 As a raw material, SrTiO was prepared by the molten salt method 3 : Yb, Tm, where the temperature of the molten salt method is not lower than 1000 ° C, TiO 2 , SrCO 3 , Yb 2 o 3 、Tm 2 o 3 The proportioning ratio of Sr, Ti, Yb, Tm is added according to the element molar ratio of 99:99:8 / 9:1 / 9. The strontium titanate semiconductor material doped with ytterbium and thulium provided in the present disclosure not only has an absorption spectrum that can extend to the infrared region, but also has good photolytic water splitting performance.

Description

technical field [0001] The disclosure belongs to the technical field of application of semiconductor doped materials, and relates to a strontium titanate semiconductor material doped with ytterbium and thulium, a preparation method and application thereof. Background technique [0002] The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art. [0003] Today, energy and environmental issues at the global level are an important issue, and to solve these issues, the construction of a clean energy system is indispensable. Hydrogen will serve as a clean energy, which can play an important role in the clean energy system. At present, photocatalytic technology can use photocatalytic materials to absorb sunlight and convert it into photogenerated electron-hole pairs to induce water reduction-oxidation reaction to produce hydrogen. [0004] Among many catalysts, strontium titanate has become a very go...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/10C01B3/04
CPCB01J23/10B01J35/004C01B3/042C01B2203/0277Y02E60/36
Inventor 李志华曹国炜郄元元罗楠楠张敏
Owner SHANDONG NORMAL UNIV
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