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Ytterbium-thulium doped strontium titanate semiconductor material as well as preparation method and application thereof

A strontium titanate and semiconductor technology, applied in the field of thulium strontium titanate semiconductor materials and its preparation, and doping with ytterbium, can solve the problems of difficult infrared light utilization, achieve good repeatability, improve efficiency, and good ultraviolet-infrared absorption Effect

Active Publication Date: 2019-11-01
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Among many catalysts, strontium titanate has become a very good choice of photocatalyst due to its stable properties and green environment. use of light

Method used

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  • Ytterbium-thulium doped strontium titanate semiconductor material as well as preparation method and application thereof
  • Ytterbium-thulium doped strontium titanate semiconductor material as well as preparation method and application thereof
  • Ytterbium-thulium doped strontium titanate semiconductor material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Example 1: SrTiO 3 : Preparation of Yb, Tm.

[0049] (1) 319.32mg TiO 2 , 584.5752mg SrCO 3 , 13.6mg Yb 2 o 3 , 0.96415mg Tm 2 o 3 (according to SrTiO 3 :Yb 3+ ,Tm 3+ Mole ratio 99:8 / 9:1 / 9 ratio) into the agate mortar.

[0050] (2) Add 7.4436 g of NaCl to the agate mortar of step (1), grind in cis for 20 minutes, and mix the raw materials evenly.

[0051] (3) Transfer the homogeneously mixed raw materials in step (2) to a platinum pot and compact them.

[0052] (4) Put the platinum pot in step (3) into a tube furnace, and calcinate at 1000° C. for 3 hours.

[0053] (5) After the sample calcined in step (4) was cooled to room temperature by the tube furnace program, it was taken out, ultrasonically cleaned 6 times with deionized water, centrifuged, and dried overnight in an oven at 60°C to obtain SrTiO 3 : Yb, Tm. The X-ray diffraction pattern of the sample is as figure 1 shown, without Yb 2 o 3 、Tm 2 o 3 The characteristic peak appears, indicating tha...

Embodiment 2

[0055] (1) 319.32mg TiO 2 , 584.5752mg SrCO 3 , 13.6mg Yb 2 o 3 , 0.96415mg Tm 2 o 3 (according to SrTiO 3 :Yb 3+ ,Tm 3+ Mole ratio 99:8 / 9:1 / 9 ratio) into the agate mortar.

[0056] (2) Add 7.4436 g of NaCl to the agate mortar of step (1), grind in cis for 20 minutes, and mix the raw materials evenly.

[0057] (3) Transfer the homogeneously mixed raw materials in step (2) to a platinum pot and compact them.

[0058] (4) Put the platinum pot in step (3) into a tube furnace, and calcinate at 900° C. for 3 hours.

[0059] (5) The sample calcined in step (4) was cooled to room temperature in a tube furnace program, then taken out, ultrasonically cleaned 6 times with deionized water, centrifuged, and dried overnight in an oven at 60°C to obtain a solid material. After the sample is irradiated with a 980nm laser, it does not emit light, indicating that the reaction temperature has not been reached, and the doping has failed.

Embodiment 3

[0061] (1) 319.32mg TiO 2 , 584.5752mg SrCO 3 , 351.12528mg Yb 2 o 3 、38.2mg Tm 2 o 3 (according to SrTiO 3 :Yb 3+ ,Tm 3+ Mole ratio 80:18:2 ratio) into the agate mortar.

[0062] (2) Add 7.4436 g of NaCl to the agate mortar of step (1), grind in cis for 20 minutes, and mix the raw materials evenly.

[0063] (3) Transfer the homogeneously mixed raw materials in step (2) to a platinum pot and compact them.

[0064] (4) Put the platinum pot in step (3) into a tube furnace, and calcinate at 1000° C. for 3 hours.

[0065] (5) The sample calcined in step (4) was cooled to room temperature in a tube furnace program, then taken out, ultrasonically cleaned 6 times with deionized water, centrifuged, and dried overnight in an oven at 60°C to obtain a solid material. The X-ray diffraction pattern of the sample is as Image 6 As shown in , there are miscellaneous peaks, indicating that the doping has not been successful and is not the target product.

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Abstract

The present disclosure provides an ytterbium-thulium doped strontium titanate semiconductor material as well as a preparation method and application thereof. The preparation method comprises the following step: preparing the SrTiO3:Yb,Tm by using TiO2, SrCO3, Yb2O3 and Tm2O3 as raw materials through a molten salt growth process, wherein the temperature of the molten salt growth process is not lower than 1000 DEG C, and the TiO2, the SrCO3, the Yb2O3 and the Tm2O3 are added according to an element molar ratio of Sr to Ti to Yb to Tm of 99:99:8 / 9:1 / 9. The ytterbium-thulium doped strontium titanate semiconductor material provided in the present disclosure not only has an absorption spectrum that can be extended to an infrared region, but also has good photocatalytic water splitting property.

Description

technical field [0001] The disclosure belongs to the technical field of application of semiconductor doped materials, and relates to a strontium titanate semiconductor material doped with ytterbium and thulium, a preparation method and application thereof. Background technique [0002] The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art. [0003] Today, energy and environmental issues at the global level are an important issue, and to solve these issues, the construction of a clean energy system is indispensable. Hydrogen will serve as a clean energy, which can play an important role in the clean energy system. At present, photocatalytic technology can use photocatalytic materials to absorb sunlight and convert it into photogenerated electron-hole pairs to induce water reduction-oxidation reaction to produce hydrogen. [0004] Among many catalysts, strontium titanate has become a very go...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/10C01B3/04
CPCB01J23/10C01B3/042C01B2203/0277B01J35/39Y02E60/36
Inventor 李志华曹国炜郄元元罗楠楠张敏
Owner SHANDONG NORMAL UNIV
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