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N * M NMOSFET terahertz array detector based on DRA and antenna design method

A technology of terahertz detectors and array detectors, which is applied in the field of terahertz detectors, can solve the problems of low gain and radiation efficiency, sensitivity and imaging resolution that are difficult to meet practical application requirements, and imaging resolution of single-pixel NMOSFET terahertz detectors. Low-level problems, to achieve the effect of improving loss and improving imaging resolution

Active Publication Date: 2019-10-29
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0005] In recent years, terahertz detection and imaging based on NMOSFET has been proved to be very feasible, but due to the low gain and radiation efficiency of traditional on-chip terahertz antennas such as patches, and the low imaging resolution of single-pixel NMOSFET terahertz detectors, etc. Problems make it difficult for the current sensitivity and imaging resolution based on NMOSFET detection to meet the needs of practical applications. How to solve the above-mentioned technical problems that actually exist in the process of NMOSFET-based detection and imaging and improve the detection sensitivity and imaging resolution based on NMOSFET detection is an urgent need at present. Technical issues resolved

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0040] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the position in a certain posture (as shown in the accompanying drawing). If the specific posture changes, the directional indication will also change accordingly.

[0041] In addition, if there are descriptions involving "first", "second" and ...

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Abstract

The invention discloses an N * M NMOSFET (N-channel Metal Oxide Semiconductor Field Effect Transistor) terahertz array detector based on DRA (Digital Radiography Analysis). The N * M terahertz detector array is connected with one end of a first blocking capacitor; the other end of the first blocking capacitor is connected with one end of a second bias resistor; the other end of the second bias resistor is connected with a second bias voltage; the second bias resistor is also connected with the positive electrode of the low-noise pre-amplifier; two ends of the first resistor are respectively connected with the negative electrode and the output electrode of the low-noise pre-amplifier; one end of the first resistor is further connected with one end of the second resistor, the other end of the second resistor is connected with one end of the second blocking capacitor, the other end of the second blocking capacitor is grounded, the other end of the first resistor is connected with one endof the third blocking capacitor, and the other end of the third blocking capacitor is grounded. Compared with the prior art, the technical scheme of the invention effectively improves the imaging resolution of the terahertz detector.

Description

technical field [0001] The invention relates to the technical field of terahertz detectors, in particular to an N×M DRA-based NMOSFET terahertz array detector and an antenna design method. Background technique [0002] Terahertz (THz) waves generally refer to electromagnetic waves with a frequency of 0.1-10 THz (wavelength of 0.03-3mm). Terahertz waves are between microwaves and infrared rays, and are also called T-rays. For a long time, due to the lack of high-power terahertz radiation sources and high-performance terahertz detectors, the research progress of terahertz technology has been relatively lagging behind, so it is called "terahertz gap". [0003] In recent years, due to the rapid development of millimeter wave technology and infrared light technology, terahertz technology has attracted more and more attention and research. At present, terahertz technology and its application have become a research hotspot in the scientific community. Terahertz waves have many uni...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G01J1/42
CPCG01J1/42G06F30/39G06F30/398H01Q21/061H01Q1/2283H01Q9/0485Y02P70/50
Inventor 马建国周绍华
Owner GUANGDONG UNIV OF TECH
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