A Method for Optimizing the Charge Separation Efficiency of Carrier Conducting Layers

A charge separation and carrier technology, applied in coating, ion implantation plating, metal material coating process, etc., can solve the problems of unsuitability for industrialization, complexity, etc., to improve photoelectrochemical performance and high fault tolerance. , the effect of inhibiting electron-hole pair recombination

Active Publication Date: 2020-10-27
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods often require complex and fine parameter regulation, and have high requirements for operators and operating equipment, and are not suitable for industrialization promotion.

Method used

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  • A Method for Optimizing the Charge Separation Efficiency of Carrier Conducting Layers
  • A Method for Optimizing the Charge Separation Efficiency of Carrier Conducting Layers
  • A Method for Optimizing the Charge Separation Efficiency of Carrier Conducting Layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The substrate (FTO glass) was ultrasonically cleaned, and the substrate was ultrasonically cleaned with acetone and absolute ethanol for 30 minutes respectively, and then sent into the sputtering chamber, and then the gate was opened to load until the vacuum degree (background vacuum degree) had reached 10 －4 In the deposition chamber below Pa. Oxygen and argon gas with a ratio of 1:6 were introduced, the total pressure was controlled to be 1Pa, and the distance between the target and the substrate was 8cm, and the carrier transport layer was deposited. Sputtering pure Sn target material, deposition time 5min. After the deposition is complete, the sample tray is sent into the etch deposition chamber. First draw the local vacuum down to below 5 Pa. The transparent conductive substrate was etched by direct current plasma, the atmosphere was high-purity argon, the gas flow rate was 100 sccm, the gas pressure was 10 Pa, the distance between the electrode and the substrat...

Embodiment 2

[0027] The substrate (FTO glass) was ultrasonically cleaned, and the substrate was ultrasonically cleaned with acetone and absolute ethanol for 30 minutes respectively, and then sent into the sputtering chamber, and then the gate was opened to load until the vacuum degree (background vacuum degree) had reached 10 －4 In the deposition chamber below Pa Pa. Oxygen and argon gas with a ratio of 1:6 were introduced, the total pressure was controlled to be 1Pa, and the distance between the target and the substrate was 8cm, and the carrier transport layer was deposited. The pure Ti target is sputtered, and the deposition time is 15 minutes. After the deposition is complete, the sample tray is sent into the etch deposition chamber. First draw the local vacuum down to below 5 Pa. The transparent conductive substrate was etched by direct current plasma, the atmosphere was high-purity argon, the gas flow rate was 100 sccm, the gas pressure was 10 Pa, the distance between the electrode...

Embodiment 3

[0029] The substrate (FTO glass) was ultrasonically cleaned, and the substrate was ultrasonically cleaned with acetone and absolute ethanol for 30 minutes respectively, and then sent into the sputtering chamber, and then the gate was opened to load until the vacuum degree (background vacuum degree) had reached 10 －4 In the deposition chamber below Pa Pa. Oxygen and argon gas with a ratio of 1:6 were introduced, the total pressure was controlled to be 1Pa, and the distance between the target and the substrate was 8cm, and the carrier transport layer was deposited. Sputtering pure Sn target material, deposition time 5min. After the deposition is complete, the sample tray is sent into the etch deposition chamber. First draw the local vacuum down to below 5 Pa. The transparent conductive substrate was etched by direct current plasma, the atmosphere was high-purity argon, the gas flow rate was 100 sccm, the gas pressure was 10 Pa, the distance between the electrode and the subst...

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Abstract

The invention discloses a method for optimizing charge separation efficiency of a carrier conduction layer. The method comprises the steps of 1, ultrasonically cleaning a base material by using a cleaning agent, and drying after cleaning to obtain a transparent conductive substrate; and 2, conveying the transparent conductive substrate in the S1 into a deposition chamber, introducing oxygen and argon in a ratio of 1:6, controlling the total pressure to be 1 Pa, controlling the distance between a target and the transparent conductive substrate to be 8 cm, and depositing the carrier conduction layer for 15 min; and after the deposition is finished, feeding a sample tray into an etching chamber, and etching the transparent conductive substrate by adopting direct-current plasma. Compared withthe prior art, the method is simpler in process aspect, can be continuously prepared in combination with magnetron sputtering without increased excessive cost, and is economically feasible; in terms of performance, the area at the interface is increased, so that more carrier separation and transport channels are provided, electron-hole pair recombination at the interface is inhibited, and the photoelectrochemical performance of the sample is improved.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a method for optimizing the charge separation efficiency of a carrier conducting layer. Background technique [0002] The carrier transport layer generally has the following functions: first, it forms an ohmic contact with the perovskite absorber material, lowering the energy level barrier of the electrode and the absorber layer; Hole transport, reducing the recombination of carriers at the interface. The n-type semiconductor is usually used as the electron transport layer, and the electron transport in the n-type semiconductor is determined by the scattering effect caused by the thermal vibration of the lattice and the directional drift driven by the built-in electric field of the battery. For a direct bandgap semiconductor with a smaller forbidden band width, the effective mass of electrons is smaller, so the carrier mobility is high. Therefore, in inorganic semi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/08C23C14/06
CPCC23C14/06C23C14/083C23C14/086C23C14/3464C23C14/35C23C14/5826
Inventor 云山郭探洪坤陈静李彦兴李华举
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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