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Preparation method of selenium selenide thin film with certain forbidden band width

A germanium selenide and band gap technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components and other directions, can solve the problems of complex process, high cost, and many amorphous germanium selenide, etc., and achieves the preparation process. Simple, fast heating rate and short reaction period

Active Publication Date: 2019-10-18
INST OF CHEM CHINESE ACAD OF SCI
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Problems solved by technology

At present, it has been reported that germanium selenide polycrystalline thin film is prepared by sublimation method in close space, but its forbidden band width is 1.14eV, and it cannot be adjusted, and the regulation of forbidden band width of germanous selenide thin film has not been reported yet.
At the same time, some researchers have prepared amorphous germanium selenide thin films by dual-source co-evaporation and magnetron sputtering, but the process is complicated and the cost is high, and amorphous germanium selenide has many defects such as dangling bonds. Suitable for use as light absorbing material

Method used

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  • Preparation method of selenium selenide thin film with certain forbidden band width
  • Preparation method of selenium selenide thin film with certain forbidden band width
  • Preparation method of selenium selenide thin film with certain forbidden band width

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Embodiment Construction

[0043] Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the contents of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms also fall within the scope of the present invention.

[0044]The preparation of germanium selenide thin films with different band gaps by the present invention is divided into two steps, comprising preparation of amorphous germanium selenide thin films by near-space sublimation and annealing of amorphous germanium selenide thin films, such as figure 1 shown.

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Abstract

The invention discloses a preparation method of a selenium selenide thin film with a certain forbidden band width. The forbidden band width of the selenium selenide thin film is 1.14-1.79 eV. The method adopts a near-space sublimation method, and comprises two steps of preparing an amorphous selenium selenide thin film and annealing the amorphous selenium selenide thin film. The selenium selenidefilm can be used for constructing a laminated selenide thin film solar cell so as to improve the photoelectric conversion efficiency of the selenium selenide thin film solar cell.

Description

technical field [0001] The invention belongs to the field of photoelectric material preparation, and in particular relates to the preparation of germanium selenide thin films with different band gaps. Background technique [0002] Germanium selenide material (GeSe) is an excellent absorbing layer material with high light absorption coefficient and suitable bandgap width, and its constituent elements have high abundance in the earth's crust and low toxicity. Germanium selenide (GeSe) is a binary compound of Group IV-VI and belongs to p-type semiconductor material. Its indirect band gap is 1.14eV, its absorption edge wavelength is about 1000nm, and its response to the solar spectrum is in the most ideal solar spectrum. Band, with high absorption coefficient, can be used as the absorbing layer material of thin film solar cells. At present, thin-film solar cells with germanium selenide as the absorbing layer have been prepared, and a photoelectric conversion efficiency of 1.48%...

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Application Information

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IPC IPC(8): H01L21/02H01L31/032H01L31/0392
CPCH01L21/02568H01L21/02694H01L31/0324H01L31/0392Y02E10/50
Inventor 胡劲松薛丁江刘顺畅
Owner INST OF CHEM CHINESE ACAD OF SCI
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