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Wavelength tunable directly modulated silicon-based external cavity laser

A laser and wavelength technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of low integration and high power consumption, and achieve the effects of high structural integration, low manufacturing cost, and low energy consumption

Active Publication Date: 2020-10-16
SHANGHAI JIAO TONG UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such a solution has the disadvantages of low integration and high power consumption

Method used

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  • Wavelength tunable directly modulated silicon-based external cavity laser

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Embodiment Construction

[0019] In order to further clarify the purpose, technical solution and core advantages of the technical solution, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following specific examples are for the purpose of illustration only, and are not intended to limit the present invention.

[0020] Such as figure 1 As shown, the silicon-based wavelength tunable direct modulation external cavity laser of the present invention includes a reflective semiconductor optical amplifier 101, a spot size converter 102, a phase shifter 103, a narrow passband filter 104, a microring modulator 105, a first mirror 106 and a second mirror 107 . The output end of the reflective semiconductor optical amplifier 101 is connected to the input end of the spot size converter 102, and the output end of the spot size converter 102 is connected to the narrow pass filter 104 through a phase shifter 103 The input end of descr...

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Abstract

The invention discloses a wavelength-tunable directly modulated silicon-based external cavity laser. A reflective semiconductor optical amplifier of the directly modulated external cavity laser is connected to a phase shifter through a silicon-based spot size converter and then is connected to an input end of a narrow passband filter; an output end of the narrow passband filter is connected to theinput end of a micro-ring modulator; a download end of the micro-ring modulator is connected to the input end of a first reflector; and a through end of the micro-ring modulator is connected to a second reflector. According to the wavelength-tunable directly modulated silicon-based external cavity laser, a filter structure is formed through cursor effects of the narrow passband filter and the micro-ring modulator to obtain laser light with a wide tuning range and a narrow linewidth, and meanwhile, output light is modulated. The micro-ring modulator has dual functions of filtering and modulating and has the advantages of high structure integration, low manufacturing cost and low energy consumption.

Description

technical field [0001] The invention relates to the field of integrated optics of optical communication, in particular to a silicon-based external cavity laser with adjustable wavelength and direct modulation. Background technique [0002] In the field of integrated optics, silicon-based photonic devices have achieved considerable development in recent years due to their advantages such as CMOS compatibility, large refractive index difference, good thermo-optic effect and carrier dispersion effect. Among them, silicon-based MZM modulators and silicon-based microring modulators have achieved product-level applications in the fields of optical communication and optical interconnection. With the rapid growth of network data, low-power, high-speed optical signal transmission technology has become the key, and silicon-based optoelectronic integrated chips play an important role in this process. [0003] However, due to the indirect bandgap material properties of silicon, silicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00
CPCH01S5/0078H01S5/0085
Inventor 周林杰郭宇耀陆梁军陈建平付志明陆建鑫
Owner SHANGHAI JIAO TONG UNIV
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