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Bidirectional enhanced gate-controlled thyristor electrostatic protection device and manufacturing method thereof

An electrostatic protection and enhancement technology, applied in the field of bidirectional enhanced gate-controlled thyristor electrostatic protection devices and their fabrication, can solve problems such as voltage drop

Active Publication Date: 2021-09-14
HUNAN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, the bidirectional thyristor device will produce a negative resistance phenomenon, that is, the current continues to increase, but the voltage drops. After the voltage hysteresis to the maintenance voltage, the overall device works in the low resistance area.

Method used

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  • Bidirectional enhanced gate-controlled thyristor electrostatic protection device and manufacturing method thereof
  • Bidirectional enhanced gate-controlled thyristor electrostatic protection device and manufacturing method thereof
  • Bidirectional enhanced gate-controlled thyristor electrostatic protection device and manufacturing method thereof

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Embodiment Construction

[0035] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0036] Such as Figure 1-Figure 6 As shown, a bidirectional enhanced gate-controlled thyristor electrostatic protection device includes a substrate P-Sub101, an NBL region 102 is arranged on the substrate P-Sub101, and a first DN is arranged on the NBL region 102 from left to right. -Well region 1041, first P-EPI region 1031, second DN-Well region 1042, second P-EPI region 1032, third DN-Well region 1043; P-Sub is a P-type substrate region, NBL is N Type buried layer region, DN-Well is a deep N well region, and P-EPI is a P-type epitaxial layer region.

[0037] The first P-Well region 105 is provided in the first P-EPI region 1031, and the first field oxygen isolation region 201, the first P+ implantation region 108, The second field oxygen isolation region 202, the first N+ implantation region 109, and the first polysilicon gate 208;

[0038] The se...

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Abstract

The invention discloses a bidirectional enhanced gate-controlled thyristor electrostatic protection device, which comprises a substrate P-Sub, an NBL area is arranged on the substrate P-Sub, a first DN-Well area, a first P-EPI area, the second DN-Well area, the second P-EPI area, the third DN-Well area; the first P-Well area is set in the first P-EPI area, and the first P-Well area is set There is a first polysilicon gate; a second P-Well area is set in the second P-EPI area, and a second polysilicon gate is set in the second P-Well area. The first polysilicon gate and the second polysilicon gate of the present invention form an enhanced gate control structure, and the enhanced gate control structure can reduce the on-resistance of the bidirectional thyristor device, and the positive feedback loop gain of the thyristor Increase, the failure current is effectively increased, and soft failure and surface breakdown will not occur prematurely.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a bidirectional enhanced gate-controlled thyristor electrostatic protection device and a manufacturing method thereof. Background technique [0002] With the continuous advancement of electronic technology and the continuous development of the scientific level, the development trend of integrated circuits still follows the law of Moore's law, that is, the device size enters the nanometer level and the integration degree is higher. Electrostatic discharge (ESD) is one of the main factors that cause the failure of integrated circuit chips, and electrostatic force can be seen everywhere and is closely related to people's lives. Therefore, more and more people engaged in IC design begin to pay attention to the protection of ESD. According to relevant data, in the environment of integrated circuit and microelectronics, more than half of electronic products fail due to ESD phen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 金湘亮汪洋
Owner HUNAN NORMAL UNIVERSITY
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