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Boron phosphide single crystals and preparation method and application thereof

A technology of boron phosphide and single crystal, which is applied in the field of boron phosphide single crystal and its preparation, can solve the problems of toxic hazards of reactants and difficult preparation, and achieve the effects of less defects, good application prospects and excellent performance

Active Publication Date: 2019-09-27
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the above-mentioned methods all have the problems of difficulty in preparation, poisonous and dangerous reactants, and difficulty in making boron phosphide single crystals widely used.

Method used

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  • Boron phosphide single crystals and preparation method and application thereof
  • Boron phosphide single crystals and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] This embodiment prepares boron phosphide single crystal according to the following method:

[0063] (1) Weigh boron powder, red phosphorus and nickel powder according to the molar ratio of 1:1:2.5, then put them into an agate mortar for grinding and mixing, put the obtained mixture into a quartz tube, and then connect to a vacuum Sealing machine, slowly pumping to a vacuum of 10 -3 Pa, use a high-temperature flame spray gun to heat and melt the neck of the quartz tube and the quartz plug in a vacuum environment, and solidify and seal after cooling;

[0064] (2) placing the sealed container in step (1) in a tube furnace, warming up to 1200°C for 1000min with a heating rate of 5°C / min, then cooling to 1100°C with a cooling rate of 0.05°C / min , and then continue to cool down at a cooling rate of 5°C / min, and cool down to 25°C to obtain a reaction product;

[0065] (3) Take out the sealed container from the tube furnace, cut the quartz tube with a cutting machine, take ou...

Embodiment 2

[0070] This embodiment prepares boron phosphide single crystal according to the following method:

[0071] (1) Weigh boron powder, red phosphorus and nickel powder according to the molar ratio of 1.1:1.1:2, then put them into an agate mortar for grinding and mixing, put the obtained mixture into a quartz tube, and then connect to a vacuum Sealing machine, slowly pumping to a vacuum of 5 × 10 -4 Pa, use a high-temperature flame spray gun to heat and melt the neck of the quartz tube and the quartz plug in a vacuum environment, and solidify and seal after cooling;

[0072] (2) placing the sealed container in step (1) in a tube furnace, warming up to 1180°C for 1100min at a heating rate of 4°C / min, then cooling to 1150°C with a cooling rate of 0.04°C / min , and then continue to cool down at a cooling rate of 4°C / min, and cool down to 35°C to obtain a reaction product;

[0073] (3) Take out the sealed container from the tube furnace, cut the quartz tube with a cutting machine, tak...

Embodiment 3

[0076] This embodiment prepares boron phosphide single crystal according to the following method:

[0077] (1) Weigh boron powder, red phosphorus and nickel powder according to the molar ratio of 0.9:0.9:3, then put them into an agate mortar for grinding and mixing, put the obtained mixture into a quartz tube, and then connect to a vacuum Sealing machine, slowly pumping to a vacuum of 10 - 4 Pa, use a high-temperature flame spray gun to heat and melt the neck of the quartz tube and the quartz plug in a vacuum environment, and solidify and seal after cooling;

[0078] (2) placing the sealed container in step (1) in a tube furnace, warming up to 1190°C for 900min at a heating rate of 6°C / min, then cooling to 1120°C with a cooling rate of 0.06°C / min , and then continue to cool down at a cooling rate of 6°C / min, and cool down to 15°C to obtain a reaction product;

[0079] (3) Take out the sealed container from the tube furnace, cut the quartz tube with a cutting machine, take o...

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Abstract

The invention provides boron phosphide single crystal and a preparation method and application thereof. The method comprises the following steps: (1) mixing a boron source, a phosphorus source and a catalyst, placing in a container and vacuumizing, and then sealing; (2) placing the sealed container in step (1) in a reactor, raising the temperature to a first reaction temperature to carry out a reaction, and then lowering the temperature to a second reaction temperature at a rate of temperature fall of 0.06 DEG C / min or below to obtain the boron phosphide single crystal. The preparation method of the boron phosphide single crystal provided by the invention avoids the use of hazardous gases such as hydrogen phosphide; the interaction among the catalyst and the boron source and the phosphorus source is utilized, and high-temperature reaction is first performed and then the temperature is slowly lowered for reaction, so that the separation by crystallization of boron phosphide is gradually realized to obtain the single crystal; the preparation method is a relatively convenient and feasible synthesis method.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and relates to a single crystal and a preparation method and use thereof, in particular to a boron phosphide single crystal and a preparation method and use thereof. Background technique [0002] Electronic information manufacturing is an important strategic industry, and its foundation is the research and development and manufacturing of semiconductors, but the performance of the first-generation semiconductors represented by silicon and the second-generation semiconductors represented by gallium arsenide in their various application fields has been approaching its physical limits. In this context, it becomes particularly important to research new semiconductors with high mobility, high thermal conductivity, wide band gap, and ability to work in harsh environments. [0003] Boron phosphide (BP) is an excellent candidate material. Its structure is similar to diamond and cubic boron ...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B11/00
CPCC30B11/00C30B29/40
Inventor 桂睿王善民周雪峰
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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