Detection method for preventing printing mixing during SE battery production process
A technology of production process and detection method, applied in circuits, electrical components, semiconductor/solid-state device testing/measurement, etc., can solve problems such as mixing, loss, and difficulty in observation, so as to achieve zero mixing in production lines and avoid losses. , to avoid the effect of a large number of mixed films
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Embodiment 1
[0032] The production process steps of SE battery with model 4BB are as follows:
[0033] 1. Pre-cleaning and suede preparation of P-type silicon wafers;
[0034] 2. Preparation of P-N junction: use thermal diffusion to prepare phosphorus diffusion layer, adjust N 2 amount, oxygen flow rate, amount of phosphorus source, and diffusion temperature, to prepare the required high-resistance diffusion layer of 100-180Ω;
[0035] 3. SE laser doping: doping three anti-break grid lines 5 on the surface of the cell 1;
[0036] 4. Prepared by back etching to remove PSG, annealing, aluminum oxide passivation film and front and back SiNx layers;
[0037] 5. Photo inspection steps: S1. Add a photo booth 2 before the laser slotting and loading area on the back, as attached to the manual figure 1 As shown, a dotted frame area with the same size as the cell 1 is set in advance on the photo stage 2 to place the cell 1, and a one-time coordinate system 3 is established on the surface of the p...
Embodiment 2
[0045] The production process steps of SE battery model 5BB are as follows:
[0046] 1. Pre-cleaning and suede preparation of P-type silicon wafers;
[0047] 2. Preparation of P-N junction: use thermal diffusion to prepare phosphorus diffusion layer, adjust N 2 amount, oxygen flow rate, amount of phosphorus source, and diffusion temperature, to prepare the required high-resistance diffusion layer of 100-180Ω;
[0048] 3. SE laser doping: doping four anti-break grid lines 5 on the surface of the cell 1;
[0049] 4. Prepared by back etching to remove PSG, annealing, aluminum oxide passivation film and front and back SiNx layers;
[0050] 5. Photo inspection steps: S1. Add a photo booth 2 before the laser slotting and loading area on the back, as attached to the manual figure 1 As shown, a dotted frame area with the same size as the cell 1 is set in advance on the photo stage 2 to place the cell 1, and a one-time coordinate system 3 is established on the surface of the photo s...
Embodiment 3
[0058] The steps of the production process of the SE battery whose model is a shingled module are as follows:
[0059] 1. Pre-cleaning and suede preparation of P-type silicon wafers;
[0060] 2. Preparation of P-N junction: use thermal diffusion to prepare phosphorus diffusion layer, adjust N 2 amount, oxygen flow rate, amount of phosphorus source, and diffusion temperature, to prepare the required high-resistance diffusion layer of 100-180Ω;
[0061] 3. SE laser doping: Doping ten anti-break grid lines 5 on the surface of the cell 1;
[0062] 4. Prepared by back etching to remove PSG, annealing, aluminum oxide passivation film and front and back SiNx layers;
[0063] 5. Photo inspection steps: S1. Add a photo booth 2 before the laser slotting and loading area on the back, as attached to the manual figure 1 As shown, a dotted frame area with the same size as the cell 1 is set in advance on the photo stage 2 to place the cell 1, and a one-time coordinate system 3 is establis...
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