Preparation method for super-thick energy absorption coating layer
A coating, ultra-thick technology, applied in the coating, metal material coating process, ion implantation plating and other directions, can solve the problems of reducing the service life of the blade, erosion and wear of the compressor blade, etc., to achieve convenient and accurate preparation, improve The effect of bond strength, high film toughness
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Embodiment 1
[0071] S01: cleaning the substrate with a gas ion source;
[0072] During the cleaning process of the surface gas ion source, heat treatment is carried out, and the heating temperature is 450°C. At the same time, the ion source treatment is divided into two stages; the first stage is 0-600V, beam current 2A, processing 30min, followed by 1500V, beam current 0.3A, processing 40min;
[0073] S02: The substrate is cleaned with high-power pulse metal ions;
[0074] During the high-power pulse metal cleaning process of the substrate, the metal elements to be cleaned are Ti, Cr, C, Co or Hf; the beam diameter during metal ion cleaning is 800mm.
[0075] S03: Depositing CrAlNC by feeding acetylene and nitrogen;
[0076] When depositing the film layer, the amount of acetylene and nitrogen gas is changed sinusoidally and alternately with time. Acetylene intake is 0-500sccm, nitrogen intake is 0-1000sccm, acetylene and nitrogen change sinusoidally with time, and the transient value r...
Embodiment 2
[0083] S01: cleaning the substrate with a gas ion source;
[0084] During the cleaning process of the surface gas ion source, heat treatment is carried out at a heating temperature of 480°C. At the same time, the ion source treatment is divided into two stages; the first stage is 0-600V, beam current 3A, processing 30min, followed by 1500V, beam current 0.5A, processing 40min;
[0085] S02: The substrate is cleaned with high-power pulse metal ions;
[0086] During the high-power pulse metal cleaning process of the substrate, the metal elements to be cleaned are Ti, Cr, C, Co or Hf; the beam diameter during metal ion cleaning is 800mm.
[0087] S03: Depositing CrAlNC by feeding acetylene and nitrogen;
[0088] When depositing the film layer, the amount of acetylene and nitrogen gas is changed sinusoidally and alternately with time. Acetylene intake is 0-500sccm, nitrogen intake is 0-1000sccm, acetylene and nitrogen change sinusoidally with time, and the transient value ratio...
Embodiment 3
[0095] S01: cleaning the substrate with a gas ion source;
[0096] During the cleaning process of the surface gas ion source, heat treatment is carried out, and the heating temperature is 5000C. At the same time, the ion source treatment is divided into two stages; the first stage is 0-600V, beam current 4A, processing 30min, followed by 1600V, beam current 0.8A, processing 40min;
[0097] S02: The substrate is cleaned with high-power pulse metal ions;
[0098] During the high-power pulse metal cleaning process of the substrate, the metal elements to be cleaned are Ti, Cr, C, Co or Hf; the beam diameter during metal ion cleaning is 800mm.
[0099] S03: Depositing CrAlNC by feeding acetylene and nitrogen;
[0100] When depositing the film layer, the amount of acetylene and nitrogen gas is changed sinusoidally and alternately with time. Acetylene intake is 0-500sccm, nitrogen intake is 0-1000sccm, acetylene and nitrogen change sinusoidally with time, and the transient value r...
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