Diffusion method of monocrystalline silicon base inverted pyramid-like suede structure

Abstract

The invention provides a diffusion method of a monocrystalline silicon base inverted pyramid-like suede structure. The method comprises the steps of: employing a P-type monocrystalline silicon wafer as a monocrystalline silicon substrate, performing the anisotropic etching on the front surface of the monocrystalline silicon substrate to obtain a uniformly distributed inverted pyramid-like structure; and putting the silicon wafer having the inverted pyramid-like structure into a diffusion furnace for step-by-step diffusion, wherein the step-by-step diffusion comprises deposition of a phosphorussource under the condition of sequentially increasing the temperature and the temperature reduction procedure with at least two gradients. The design of three-step ordered deposition is beneficial tothe full and uniform deposition of the phosphorus source on the surface of the silicon wafer; the temperature reduction is divided into two steps of buffer type temperature reduction, so that a deadlayer formed by accumulation of excessive phosphorus sources on the surface of the silicon wafer is reduced, the diffusion sheet resistance obtained by the method is ideal sheet resistance and the uniformity is good.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a diffusion method for a monocrystalline silicon-based inverted pyramid textured structure. Background technique [0002] The traditional monocrystalline silicon solar cell technology scheme is based on monocrystalline silicon, with a pyramid structure etched on the front, and the pyramid is covered with a PECVD-SiNx (x is a positive number) passivation film, and the front and back are screen-printed with silver and aluminum paste. And the back electrode, through the sintering process, realize the front ohmic contact and the aluminum back field; the disadvantage of this technical solution is that the spectral response of the battery device in the short wave band (300-450nm) and long wave band (900-1100nm) is not high, the main reason is The anti-reflection ability of the front pyramid structure is average, resulting in low external quantum efficiency in the short-wave band, and the sur...

AI Technical Summary

Problems solved by technology

Under the same diffusion process method, the diffusion resistance will be affected by the surface condition of the silicon wafer, and the diffusion effect is not ideal

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