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Crucible capable of increasing solar energy silicon ingot yield, and preparation method thereof

A technology of solar energy and crucible, which is applied in the field of photovoltaic solar polysilicon ingot casting, can solve the problems of increasing the impurity content of polysilicon ingots, failing to guarantee the yield of polysilicon ingots, and affecting the quality of polysilicon ingots, so as to facilitate the nucleation of silicon ingots, The effect of increasing the yield of silicon ingots and improving the quality of silicon ingots

Inactive Publication Date: 2019-07-26
内蒙古上航新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the preparation process of polycrystalline silicon ingots, quartz crucibles are often used as ingot containers, but since polycrystalline silicon is melted into liquid silicon, it will produce a wetting effect on silicon dioxide, and the direct contact between liquid silicon and the inner wall of the quartz crucible will not only make the quartz crucible Impurities entering the liquid silicon will increase the impurity content of the polysilicon ingot, and will cause the polysilicon ingot to react with the quartz crucible to cause adhesion. The stress generated by the adhesion will cause the polysilicon ingot to crack during solidification and expansion, directly affecting the quality of the polysilicon ingot. Quality, lower polysilicon ingot yield
At present, in order to overcome the above problems, a layer of silicon nitride coating is usually sprayed between the quartz crucible and liquid silicon. The impurities contained in the silicon coating will enter the liquid silicon during the melting process and increase the impurity content of the polysilicon ingot. Therefore, only by spraying silicon nitride coating on the inner wall of the quartz crucible cannot guarantee the improvement of the yield of the polysilicon ingot. rate, improving the minority carrier life of the side and bottom of the polysilicon ingot

Method used

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  • Crucible capable of increasing solar energy silicon ingot yield, and preparation method thereof
  • Crucible capable of increasing solar energy silicon ingot yield, and preparation method thereof
  • Crucible capable of increasing solar energy silicon ingot yield, and preparation method thereof

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Effect test

Embodiment 1

[0030] Such as figure 1 As shown, the crucible that can improve the yield of solar silicon ingots includes a quartz crucible body 1, on the inner wall of the quartz crucible body 1, a high-purity octahydrate barium hydroxide coating 2, a high-purity melting barium hydroxide coating 2, and a high-purity melting The quartz slurry coating 3 is pasted and covered with a high-purity quartz wafer 4 on the bottom of the quartz crucible body 1, and the inner wall of the high-purity fused silica slurry coating 3 and the top surface of the high-purity quartz wafer 4 are spray-coated with release silicon nitride Coating 5.

[0031] Add high-purity barium hydroxide octahydrate coating 2 and high-purity fused silica slurry coating 3 between the inner wall of the quartz crucible body 1 and the release silicon nitride coating 5, which can better prevent impurities from entering the liquid state The effect of silicon can reduce the crack rate of silicon ingots, reduce the oxygen content in s...

Embodiment 2

[0038] Such as figure 1 As shown, the crucible that can improve the yield of solar silicon ingots includes a quartz crucible body 1, on the inner wall of the quartz crucible body 1, a high-purity octahydrate barium hydroxide coating 2, a high-purity melting barium hydroxide coating 2, and a high-purity melting The quartz slurry coating 3 is pasted and covered with a high-purity quartz wafer 4 at the bottom of the quartz crucible body 1, and the inner wall of the high-purity fused silica slurry coating 3 and the top surface of the high-purity quartz wafer 4 are spray-coated with release silicon nitride Coating 5.

[0039] Add high-purity barium hydroxide octahydrate coating 2 and high-purity fused silica slurry coating 3 between the inner wall of the quartz crucible body 1 and the release silicon nitride coating 5, which can better prevent impurities from entering the liquid state The effect of silicon can reduce the crack rate of silicon ingots, reduce the oxygen content in s...

Embodiment 3

[0046] Such as figure 1 As shown, the crucible that can improve the yield of solar silicon ingots includes a quartz crucible body 1, on the inner wall of the quartz crucible body 1, a high-purity octahydrate barium hydroxide coating 2, a high-purity melting barium hydroxide coating 2, and a high-purity melting The quartz slurry coating 3 is pasted and covered with a high-purity quartz wafer 4 at the bottom of the quartz crucible body 1, and the inner wall of the high-purity fused silica slurry coating 3 and the top surface of the high-purity quartz wafer 4 are spray-coated with release silicon nitride Coating 5.

[0047] Add high-purity barium hydroxide octahydrate coating 2 and high-purity fused silica slurry coating 3 between the inner wall of the quartz crucible body 1 and the release silicon nitride coating 5, which can better prevent impurities from entering the liquid state The effect of silicon can reduce the crack rate of silicon ingots, reduce the oxygen content in s...

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Abstract

The invention discloses a crucible capable of increasing solar energy silicon ingot yield, and a preparation method thereof. The crucible capable of increasing solar energy silicon ingot yield comprises a quartz crucible main body, a high purity barium hydroxide octahydrate coating layer, a high purity fused quartz slurry coating layer, a high purity quartz wafer, and a demoulding silicon nitridecoating layer. The preparation method comprises following steps: 1, preparation of the high purity barium hydroxide octahydrate coating layer, 2, preparation of the high purity fused quartz slurry coating layer, 3, bottom quartz wafer pasting, and 4, preparation of the demoulding silicon nitride coating layer. The advantages are that: the high purity barium hydroxide octahydrate coating layer andthe high purity fused quartz slurry coating layer are arranged between the internal side wall of the quartz crucible main body and the demoulding silicon nitride coating layer, so that entering of impurities into liquid state silicon is prevented, and silicon ingot yield is increased; the bottom of the quartz crucible main body is provided with the high purity quartz wafer through bonding, so thatentering of impurities into liquid silicon is prevented, and silicon ingot yield is increased; in the demoulding silicon nitride coating layer, an adopted demoulding silicon nitride solution is highin beta crystal phase silicon nitride content, so that it is beneficial for silicon ingot nucleation.

Description

[0001] Technical field: [0002] The invention relates to the technical field of photovoltaic solar polycrystalline silicon ingot casting, in particular to a crucible capable of increasing the yield of solar silicon ingots and a preparation method thereof. [0003] Background technique: [0004] Solar energy is a new type of renewable energy. With the deepening of research on solar energy in recent years, related fields such as photovoltaic power generation using solar energy as energy have also developed rapidly. The key components of photovoltaic power generation are thin solid photovoltaic cells made of semiconductor materials, among which polycrystalline silicon solar cells have become the mainstream due to their low cost and easy manufacture. [0005] The raw material for polycrystalline silicon solar cells is polycrystalline silicon ingots. With the gradual decline in the cost of polycrystalline silicon ingot casting, increasing the yield of ingot casting has become a key...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06C04B41/89C04B41/87
CPCC04B41/009C04B41/5066C04B41/52C04B41/89C30B28/06C30B29/06C04B35/14C04B41/5072C04B41/5035C04B41/4543
Inventor 熊涛涛巢芳家刘立中李子龙
Owner 内蒙古上航新能源有限公司
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