Crystal growing device and application thereof

Abstract

The invention relates to a crystal growing device and belongs to the field of crystal growing equipment. The crystal growing device comprises a crucible, a heating device and a thermal insulation structure and is characterized in that a loading part and a seed crystal are oppositely arranged in the crucible, the loading part is used for loading a raw material and comprises at least one gas outlet,and the loading part can move towards the seed crystal in a reciprocating manner through an adjusting mechanism; the heating device heats the crucible in an induction heating manner to allow the sublimated raw material to flow out from the gas outlet and be conveyed to the surface of the seed crystal in a gas phase manner to perform crystal growing; the crucible is arranged in the cavity of the thermal insulation structure, and the thermal insulation structure is used for controlling the heat dissipation of the crucible. The crystal growing device has the advantages that the position of the loading part in a thermal field can be automatically controlled, crystal growing environment stability is achieved, the grown crystals are high in quality, the crystal growing raw material can be fullyutilized, the utilization rate of the crystal growing raw material can be increased, and production cost can be saved.

Description

technical field [0001] The application relates to a crystal growth device, which belongs to the field of crystal growth equipment. Background technique [0002] As a new type of semiconductor material, silicon carbide has excellent properties such as high withstand voltage, false loss, high thermal conductivity, and low leakage current. It is generally considered to be the most ideal new semiconductor device to replace silicon-based power devices. Physical vapor transport (Physical Vapor Transport-PVT) is a common method for growing silicon carbide crystals. In this method, the silicon carbide seed crystal is placed on the lid or top of the graphite crucible, and the graphite crucible is filled with silicon carbide powder as the growth raw material. The growth temperature is controlled so that the growth raw material is decomposed into gas phase components and then transported to the seed crystal to crystallize and grow silicon carbide crystals under the drive of the axial ...

AI Technical Summary

Problems solved by technology

The split crucible in this invention application is the charging chamber of the mobile main crucible. The crystal growth environment stability of the split crucible is poor, which affects the quality of the crystal growth, and the sublimation raw materials in the split crucible are easy to enter the nesting Part of the gaps are easy to cause blockage after cooling, which makes the stability, accuracy and flexibility of crucible movement poor, which in turn affects the quality of growing crystals

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