A Complementary Three-Dimensional Broadband Capacitor Based on Coaxial Through-Silicon Via Array

Abstract

The present invention relates to a complementary three-dimensional broadband capacitor based on a coaxial through silicon via array. The capacitor comprises a top plate capacitor, a semiconductor substrate layer and a bottom plate capacitor disposed in order from top to bottom, the semiconductor substrate layer is provided with a plurality of coaxial through silicon via structures which pass through upper and lower surfaces, the top plate capacitor is connected to the bottom plate capacitor through the plurality of coaxial through silicon via structures, the top plate capacitor comprises an upper lead-out terminal of the complementary three-dimensional broadband capacitor, and the bottom plate capacitor comprises a lower lead-out terminal of the complementary three-dimensional broadband capacitor. According to the complementary three-dimensional broadband capacitor, an advanced three-dimensional monolithic integrated structure is used, an occupied chip area is small, the electric fieldstorage area is greatly improved, and the capacitance density far higher than that of a common planar integrated circuit is obtained.

Description

technical field [0001] The invention belongs to the technical field of microwave integrated circuits, and in particular relates to a complementary three-dimensional integrated broadband capacitor based on a coaxial through-silicon hole array. Background technique [0002] Capacitors are very important passive devices in modern communication systems. They are widely used in analog, digital-analog hybrid, radio frequency and microwave integrated circuits. Their main working principle is to store energy in the form of electric field energy to achieve bypass, decoupling, Filtering, compensation, etc. [0003] With the development of communication technology, radio frequency / microwave integrated circuits put forward new requirements for capacitors: on the one hand, for the application requirements of radio frequency / microwave integrated circuits with wide operating frequency range and low insertion loss, capacitors are required to have the characteristics of broadband and high qu...

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Problems solved by technology

The existing on-chip integrated capacitors have large sizes, which is not conducive to the miniaturization and monolithic integration of integrated circuits, and the capacitance density, self-resonant frequency and quality factor are all low, which cannot meet the further development of RF / microwave integrated circuits. need

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