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Combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method

A porous baffle and vacuum deposition technology, which is applied in vacuum evaporation plating, ion implantation plating, coating, etc., can solve the problems of film composition pollution, large particle defects, and low film deposition efficiency, so as to ensure uniformity, The effect of improving utilization efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias conical tube and the porous baffle combined device and the composite effect of the bias electric field attraction can eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through with high transmission efficiency. The combined device of the lined bias conical tube and the porous baffle and the multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the bias from the multi-stage magnetic field device and the inner liner. The large particle defects contained in the arc plasma transmitted by the combination device of the conical tube and the porous baffle, while using the movable coil device to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber , realize the control and adjustment of film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, reduce the loss of composite plasma in the vacuum chamber, and overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the shape of the substrate , completely remove the large particle defects that may remain in the arc plasma transmitted from the multi-stage magnetic field device and the combination device of the lined bias conical tube and the porous baffle, so that the surface of the workpiece can be adjusted under the condition of applying a negative bias Ion energy, using the bias electric field suppression on the surface of the substrate to remove large particle defects in the arc plasma, prepare continuous, dense and high-quality films, and at the same time realize the control of the content of target elements in the film and reduce the production cost of using alloy targets , improve the transmission efficiency of the plasma, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and performance, a combination of magnetic field and lined conical tube and porous barrier is proposed Vacuum Deposition Method for Plate Composite

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  • Combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method
  • Combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method
  • Combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method

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specific Embodiment approach 1

[0024] Specific implementation mode one: the following combination Figure 1-4 Describe this embodiment mode. In this embodiment mode, a device used in a vacuum deposition method that combines a magnetic field with a lined conical tube and a porous baffle includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source ( 3), high-power pulse magnetron sputtering power supply (4), high-power pulse magnetron sputtering target source (5), bias power waveform oscilloscope (6), high-power pulse magnetron sputtering power waveform oscilloscope (7) , waveform synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field device power supply (13), lining bias Combination device of pressure conical tube and porous baffle (14), lining bias power supply (15), sample stage (16) and vacuum chamber (17);

[0025] In this device:

[0026]...

specific Embodiment approach 2

[0042] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lined conical tube and the porous baffle are combined, the arc power supply (2) is turned on, and the multi-stage magnetic field is turned on The power supply (5) adjusts the multi-stage magnetic field device (12), turns on the lining bias power supply (15), adjusts the bias voltage of the lining bias conical tube and porous baffle combined device (14), and turns on the movable coil device power supply (10 ) adjust the movable coil device (9), adjust the output resistance of the rheostat device (10), and control the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously by the waveform synchronous matching device (8). The period of the output pulse of the power pulse magnetron sputtering power supply (4) is an integer multiple of the output pulse of th...

specific Embodiment approach 3

[0043] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lined conical tube and the porous baffle are combined, the arc power supply (2) is turned on, and the multi-stage magnetic field is turned on The power supply (5) adjusts the multi-stage magnetic field device (12), turns on the lining bias power supply (15), adjusts the bias voltage of the lining bias conical tube and porous baffle combined device (14), and turns on the movable coil device power supply (10 ) adjust the movable coil device (9), adjust the output resistance of the rheostat device (10), and control the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously by the waveform synchronous matching device (8). Power pulse magnetron sputtering power supply (4) outputs high-power pulses and bias voltage pulse waveform output by bias power supply ...

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Abstract

The invention discloses a combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method, and belongs to the technical field of material surface treatment. In order to solve the problems of pollution to thin films by macroparticles in arc ion plating, target material using restrictions, magnetic filtration arc plasma losses, high-power pulse magnetron sputtering discharge instability and the like, the device disclosed in the invention comprises a grid bias power source, an arc ion plating target source and power source, a multistage magnetic field device and power source, a lining bias tapered tube and porous baffle combination device and power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Thin film deposition is conducted, the devices are connected and the system is started. When the vacuum degree of the inside of a vacuum chamber is smaller than 10<-4>Pa, working gas is connected in, a film coating power source is started, the grid bias power source can adjust the energy of plasma, the combination device can remove macroparticle defects and guide composite plasma conveyance, losses in the vacuum chamber are reduced and technological parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method in which a combined magnetic field is combined with a lined conical tube and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large par...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/35C23C14/54
CPCC23C14/325C23C14/3485C23C14/352C23C14/54
Inventor 魏永强王好平宗晓亚侯军兴蒋志强
Owner 魏永强
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