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All-inorganic perovskite micron sheet and preparation method thereof, and Schottky ultraviolet photoelectric detector and preparation method thereof

A technology of electrical detectors and micro-sheets, which is applied in the preparation of micro-sheets and detectors, and in the field of Schottky ultraviolet photodetectors. The effect of simple operation process

Inactive Publication Date: 2019-07-05
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But CsPbCl 3 The synthesis of perovskite nanoparticles usually requires high-temperature heat injection, the process is complicated and the cost is high, and there are many grain boundaries in the nanoparticle film, which will inevitably affect the performance of the detector, so high-quality CsPbCl 3 Perovskite materials are the key to fabricating stable perovskite ultraviolet detectors

Method used

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  • All-inorganic perovskite micron sheet and preparation method thereof, and Schottky ultraviolet photoelectric detector and preparation method thereof
  • All-inorganic perovskite micron sheet and preparation method thereof, and Schottky ultraviolet photoelectric detector and preparation method thereof
  • All-inorganic perovskite micron sheet and preparation method thereof, and Schottky ultraviolet photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Such as figure 1 As shown, the preparation method of the Schottky type ultraviolet photodetector 10 provided in this embodiment comprises the following steps:

[0042] 1. Substrate cleaning

[0043] The substrate can be Si / SiO 2 , glass, ITO and GaN and other substrates, Si / SiO is used in this embodiment 2 Substrate, first cut the substrate into a suitable size (1cm×1cm), then use deionized water, acetone, absolute ethanol, and deionized water to ultrasonically clean it in an ultrasonic cleaner for 10 minutes, and then blow it with nitrogen. Dry to get a clean substrate.

[0044] 2. Preparation of ITO electrodes with left and right structures

[0045] ITO electrodes are mainly prepared by photolithography and magnetron sputtering techniques.

[0046] (1) Photolithography: First, use a homogenizer to evenly spin-coat the photoresist on the clean Si / SiO 2 On the substrate, the condition is to rotate at a low speed of 600 rpm for 6 seconds, and then rotate at a high ...

Embodiment 2

[0057] The difference between the preparation method of the Schottky-type ultraviolet photodetector provided in the second embodiment and the first embodiment is only in "preparation of all-inorganic perovskite microsheets", specifically:

[0058] Prepare CsPbCl with a concentration of 0.01mol / L 3 / DMSO solution, and then grown on a hot stage at 70 °C for 96 hours, as Figure 7 As shown, it can be observed that there is CsPbCl on the substrate 3 Formation of microflakes with a size of 10 x 10 microns and a thickness of 300 nm.

[0059] The rest of the process is the same as that of Embodiment 1, and will not be repeated here.

[0060] test:

[0061] The prepared CsPbCl 3 The perovskite microsheet sample is placed on the probe station, and the scanning voltage is applied to the left and right electrodes to obtain dark current and photocurrent under 400nm monochromatic light, such as Figure 8 shown.

Embodiment 3

[0063] The difference between the preparation method of the Schottky-type ultraviolet photodetector provided in the third embodiment and the first embodiment is only in "preparation of all-inorganic perovskite microsheets", specifically:

[0064] Prepare CsPbCl with a concentration of 0.1mol / L 3 / DMSO solution, and then grown on a hot stage at 30 °C for 12 hours, as Figure 9 As shown, it can be observed that there is CsPbCl on the substrate 3 Formation of microflakes with a size of 20 x 30 microns and a thickness of 800 nm.

[0065] The rest of the process is the same as that of Embodiment 1, and will not be repeated here.

[0066] test:

[0067] The prepared CsPbCl 3 The perovskite microsheet sample is placed on the probe station, and the scanning voltage is applied to the left and right electrodes to obtain dark current and photocurrent under 400nm monochromatic light, such as Figure 10 shown.

[0068] The data obtained in the above examples show that the all-inorgan...

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Abstract

The invention provides an all-inorganic perovskite micron sheet and a preparation method thereof, and a Schottky ultraviolet photoelectric detector and a preparation method thereof. The preparation method of the all-inorganic perovskite micron sheet comprises the steps of: the step 1, preparing a CsPbCl3 solution; the step 2, dripping the CsPbCl3 solution on a substrate, and then covering the other substrate on the substrate dripped with the CsPbCl3 solution to obtain a double-layer substrate with the CsPbCl3 solution; the step 3, moving the double-layer substrate into a container containing an anti-solvent, making the substrate higher than the liquid level, and then sealing the container; and the step 4, placing the container on a hot table for growing for 12-96 hours at 30-70 DEG C, andfinally growing a CsPbCl3 perovskite micron sheet on the substrate. A detector with an ITO left electrode / a perovskite micron sheet / an ITO right electrode structure is further prepared on this basis,has the advantages of high responsiveness, high sensitivity, quick response recovery time and the like, and has selective detection capability on ultraviolet light.

Description

technical field [0001] The invention belongs to the field of photoelectric devices, and in particular relates to an all-inorganic perovskite micro-sheet, a Schottky-type ultraviolet photodetector containing the micro-sheet, and a preparation method of the micro-sheet and the detector. [0002] technical background [0003] Photodetectors play a vital role in the fields of modern national production and military security, so in recent years, they have been one of the hot spots that researchers have paid more attention to. At present, commercial detectors are mainly based on traditional semiconductor materials such as silicon and gallium arsenide, but because the band gap of materials such as silicon and gallium arsenide is difficult to adjust, resulting in the disadvantage of poor spectral selectivity detection, usually requires the use of optical filters To achieve selective detection, this greatly increases the cost of the detector and the complexity of the process. Therefo...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/18H01L31/032H01L31/0352
CPCH01L31/101H01L31/1876H01L31/032H01L31/0352Y02P70/50H10K10/23H10K85/50
Inventor 方国家桂鹏彬
Owner WUHAN UNIV
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