Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of film and preparation method thereof and qled device

A thin film and nano metal technology, applied in the field of thin film and its preparation, can solve the problem of low charge transfer efficiency of QLED devices, and achieve the effects of improving the overall charge transfer efficiency, optimizing matching, and increasing electron transfer efficiency.

Active Publication Date: 2021-02-19
TCL CORPORATION
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a thin film and its preparation method and QLED device, aiming at solving the problem of low charge transport efficiency of the existing QLED device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of film and preparation method thereof and qled device
  • A kind of film and preparation method thereof and qled device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The following takes the preparation of modified nano-metal oxide film by using nano-zinc oxide powder, 2-amino-5-phenyl-1,3,4-oxadiazole and ethanol as an example to introduce in detail.

[0048] (1) Select nano-zinc oxide powder with a particle size below 0.45 μm, disperse it in ethanol at a concentration of 20 mg / mL, heat it to 60 degrees Celsius in an argon atmosphere and keep it warm for 10 minutes to obtain a nano-zinc oxide solution (colloid form exists). Then inject 2-amino-5-phenyl-1,3,4-oxadiazole into the nano-zinc oxide solution at a molar ratio of 1:10, stir rapidly and keep warm for 30 minutes to obtain a modified nano-zinc oxide solution ;

[0049] (2) After the reaction, spin-coat the modified nano-zinc oxide solution on the substrate in an argon atmosphere to obtain a modified nano-metal oxide film.

Embodiment 2

[0051] The following takes the preparation of modified nanometer metal oxide film by using nanometer titanium dioxide powder, 5-methoxybenzoxazole-2-thiol and methanol as an example to introduce in detail.

[0052] (1) Select nano-titanium dioxide powder with a particle size below 0.45 μm, disperse it in methanol at a concentration of 20 mg / mL, heat it to 50 degrees Celsius in an argon atmosphere and keep it warm for 10 minutes to obtain a nano-titanium oxide solution (colloidal form exist). Then inject 5-methoxybenzoxazole-2-thiol into the nano-zinc oxide solution with a molar ratio of 1:10, stir rapidly and keep warm for 30 minutes to obtain a modified nano-titanium dioxide solution;

[0053] (2) After the reaction, spin-coat the modified nano-titanium dioxide solution on the substrate in an argon atmosphere to obtain a modified nano-metal oxide film.

Embodiment 3

[0055] The following takes the preparation of modified nano-metal oxide thin films by using nano-tin oxide powder, 2-amino-1,3,4-thiadiazole and ethanol as an example to introduce in detail.

[0056] (1) Select nano-tin oxide powder with a particle size below 0.45 μm, disperse it in ethanol at a concentration of 20 mg / mL, heat it to 60 degrees Celsius in an argon atmosphere and keep it warm for 10 minutes to obtain a nano-tin oxide solution (colloid form exists). Then inject 2-amino-1,3,4-thiadiazole into the nano-tin oxide solution at a molar ratio of 1:10, stir rapidly and keep warm for 30 minutes to obtain a modified nano-tin oxide solution;

[0057] (2) After the reaction, spin-coat the modified nano-tin oxide solution on the substrate in an argon atmosphere to obtain a modified nano-metal oxide film.

[0058] The present invention also provides a QLED device, comprising an electron transport layer, wherein the electron transport layer is the thin film of the present inve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a thin film, a preparation method thereof, and a QLED device. The method includes the steps of: providing a nanometer metal oxide solution; adding an organic heterocyclic compound to the nanometer metal oxide solution to obtain a modified nanometer metal oxide solution; The modified nanometer metal oxide solution is made into a film to obtain a modified nanometer metal oxide film. The present invention increases the electron transport efficiency and the conductive sites on the surface of the nano metal oxide by modifying the nano metal oxide, thereby improving the overall charge transport efficiency of the QLED device and optimizing the quantum dot light-emitting layer and the electron transport layer. Matching and other effects to improve the luminous efficiency of the overall device.

Description

technical field [0001] The invention relates to the technical field of QLED devices, in particular to a thin film, a preparation method thereof and a QLED device. Background technique [0002] As an inorganic semiconductor material, quantum dots have the characteristics of high color purity and good stability. Quantum dot light-emitting diodes (QLEDs) prepared with quantum dots as the light-emitting layer have the advantages of continuously adjustable spectrum, narrow light-emitting spectrum, and high quantum efficiency. It has a bright application prospect in the display field. [0003] Due to their special optical, electrical, and thermal properties, transition metal oxide materials are mostly used to prepare QLED carrier transport layers, especially the application of electron transport layers has attracted the attention of researchers. At present, the device efficiency of QLED is still limited by the material and it is difficult to meet the requirements of commercial pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K50/115H10K50/16H10K2102/00H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com