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Film, preparation method thereof and QLED device

A thin-film and nano-metal technology, applied in the field of thin films and their preparation, can solve the problems of low charge transfer efficiency of QLED devices, and achieve the effects of improving overall charge transfer efficiency, increasing conductive sites, and optimizing matching

Active Publication Date: 2019-07-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a thin film and its preparation method and QLED device, aiming at solving the problem of low charge transport efficiency of the existing QLED device

Method used

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  • Film, preparation method thereof and QLED device
  • Film, preparation method thereof and QLED device
  • Film, preparation method thereof and QLED device

Examples

Experimental program
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Effect test

Embodiment 1

[0047] The following takes the preparation of modified nano-metal oxide film by using nano-zinc oxide powder, 2-amino-5-phenyl-1,3,4-oxadiazole and ethanol as an example to introduce in detail.

[0048] (1) Select nano-zinc oxide powder with a particle size below 0.45 μm, disperse it in ethanol at a concentration of 20 mg / mL, heat it to 60 degrees Celsius in an argon atmosphere and keep it warm for 10 minutes to obtain a nano-zinc oxide solution (colloid form exists). Then inject 2-amino-5-phenyl-1,3,4-oxadiazole into the nano-zinc oxide solution at a molar ratio of 1:10, stir rapidly and keep warm for 30 minutes to obtain a modified nano-zinc oxide solution ;

[0049] (2) After the reaction, spin-coat the modified nano-zinc oxide solution on the substrate in an argon atmosphere to obtain a modified nano-metal oxide film.

Embodiment 2

[0051] The following takes the preparation of modified nanometer metal oxide film by using nanometer titanium dioxide powder, 5-methoxybenzoxazole-2-thiol and methanol as an example to introduce in detail.

[0052] (1) Select nano-titanium dioxide powder with a particle size below 0.45 μm, disperse it in methanol at a concentration of 20 mg / mL, heat it to 50 degrees Celsius in an argon atmosphere and keep it warm for 10 minutes to obtain a nano-titanium oxide solution (colloidal form exist). Then inject 5-methoxybenzoxazole-2-thiol into the nano-zinc oxide solution with a molar ratio of 1:10, stir rapidly and keep warm for 30 minutes to obtain a modified nano-titanium dioxide solution;

[0053] (2) After the reaction, spin-coat the modified nano-titanium dioxide solution on the substrate in an argon atmosphere to obtain a modified nano-metal oxide film.

Embodiment 3

[0055] The following takes the preparation of modified nano-metal oxide thin films by using nano-tin oxide powder, 2-amino-1,3,4-thiadiazole and ethanol as an example to introduce in detail.

[0056] (1) Select nano-tin oxide powder with a particle size below 0.45 μm, disperse it in ethanol at a concentration of 20 mg / mL, heat it to 60 degrees Celsius in an argon atmosphere and keep it warm for 10 minutes to obtain a nano-tin oxide solution (colloid form exists). Then inject 2-amino-1,3,4-thiadiazole into the nano-tin oxide solution at a molar ratio of 1:10, stir rapidly and keep warm for 30 minutes to obtain a modified nano-tin oxide solution;

[0057] (2) After the reaction, spin-coat the modified nano-tin oxide solution on the substrate in an argon atmosphere to obtain a modified nano-metal oxide film.

[0058] The present invention also provides a QLED device, comprising an electron transport layer, wherein the electron transport layer is the thin film of the present inve...

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Abstract

The invention discloses a film, a preparation method thereof and a QLED device. The method includes the following steps: providing a nanometer metal oxide solution; adding an organic heterocyclic compound to the nanometer metal oxide solution to obtain a modified nanometer metal oxide solution; and preparing the modified nanometer metal oxide solution into a film to obtain a modified nanometer metal oxide film. According to the invention, a nanometer metal oxide is modified so as to increase the electron transmission efficiency of the nanometer metal oxide and increase conductive sites on thesurface of the nanometer metal oxide, thereby improving the overall charge transmission efficiency of the QLED device, optimizing the matching of a quantum dot luminescent layer and an electron transmission layer and the like to improve the luminous efficiency of the overall device.

Description

technical field [0001] The invention relates to the technical field of QLED devices, in particular to a thin film, a preparation method thereof and a QLED device. Background technique [0002] As an inorganic semiconductor material, quantum dots have the characteristics of high color purity and good stability. Quantum dot light-emitting diodes (QLEDs) prepared with quantum dots as the light-emitting layer have the advantages of continuously adjustable spectrum, narrow light-emitting spectrum, and high quantum efficiency. It has a bright application prospect in the display field. [0003] Due to their special optical, electrical, and thermal properties, transition metal oxide materials are mostly used to prepare QLED carrier transport layers, especially the application of electron transport layers has attracted the attention of researchers. At present, the device efficiency of QLED is still limited by the material and it is difficult to meet the requirements of commercial pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K50/115H10K50/16H10K2102/00H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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