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Quantum dot film, preparation method thereof, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A quantum dot and quantum dot light-emitting technology, applied in the field of quantum dots, can solve the problems of poor uniformity of quantum dot films, easy agglomeration and sedimentation of ligands, selectivity limitation, etc. wide effect

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a quantum dot thin film and its preparation method, aiming to solve the problem that the ligands are easy to agglomerate and settle, and the selectivity is limited in the preparation process of the existing quantum dot thin film, so that quantum dots can be obtained. Technical problems of poor film uniformity and low efficiency

Method used

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preparation example Construction

[0024] On the one hand, an embodiment of the present invention provides a method for preparing a quantum dot film, comprising the following steps:

[0025] S01: Provide a quantum dot prefabricated film and a solution containing inorganic ligands, the quantum dots in the quantum dot prefabricated film contain initial surface ligands;

[0026] S02: performing ligand replacement in the liquid phase on the quantum dot prefabricated film and the solution containing the inorganic ligand, to obtain a quantum dot film with the inorganic ligand bound to the surface of the quantum dot.

[0027] The preparation method of the quantum dot thin film provided in the embodiment of the present invention is to perform in-situ ligand replacement after the quantum dot film is formed, and replace the ligand introduced in the quantum dot synthesis process with a smaller inorganic ligand. Because its volume is much smaller than that of organic ligands, it can passivate the surface of quantum dots wh...

Embodiment 1

[0065] A preparation method of quantum dot film:

[0066] Provide CdSe quantum dot prefabricated film and inorganic ligand solution (ie (NH 4 ) 2 S ethanol solution), the initial surface ligand in this quantum dot prefabricated film is OA;

[0067] Immerse the quantum dot prefabricated film in the inorganic ligand solution, take it out after soaking for 10min, and then transfer it to the vacuum chamber, adjust the vacuum degree to 10Pa and maintain it for 30min to remove the uncoordinated ligand and solvent in the quantum dot film .

Embodiment 2

[0069] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0070] Will (NH 4 ) 2 S was dissolved in ethanol to prepare an inorganic ligand solution;

[0071] Print the PEDOT hole injection layer, TFB hole transport layer, and CdSe quantum dot film sequentially on the ITO anode, the surface ligand of the CdSe quantum dot film is OA, and then immerse the quantum dot film in the ligand solution in step S1, Take it out after soaking for 10 minutes, then transfer it to a vacuum chamber, adjust the vacuum degree to 10 Pa and maintain it for 30 minutes, remove uncoordinated ligands and solvents in the quantum dot light-emitting layer, and obtain the quantum dot light-emitting layer;

[0072] Print a ZnO electron transport layer on the quantum dot light-emitting layer after ligand exchange, and finally evaporate an Al cathode to obtain a positive-type structure quantum dot light-emitting diode.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot film, a preparation method thereof, a QLED (Quantum dot Light-Emitting Diode) device and a preparation method thereof. The preparation method of the quantum dot film comprises the steps of providing a quantum dot prefabricated film and a solution containing an inorganic ligand, wherein the quantum dot in the quantum dot prefabricated film contains an initial surface ligand; and carrying out gas-phase ligand displacement on the quantum dot prefabricated film and the solution containing the inorganic ligand to obtain a quantum dot film with the quantum dot surface being bound with the inorganic ligand. The preparation method not only can passivate the part which cannot be passivated by anorganic ligand on quantum dot surface, but also improves the transmission of carriers and ultimately improves the overall performance of the device.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot thin film and a preparation method thereof, as well as a QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dot materials (Quantum dots, QDs) as the light-emitting layer, and has incomparable advantages over other light-emitting materials, such as Controllable small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. [0003] In general, organic ligands are attached to the surface of quantum dots through chelation and other methods. The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate the defects on the surface of quantum dots and imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50B82Y30/00B82Y40/00
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
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