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Method for preparing high-thermal-conductivity silk by feeding silkworms with nano graphene and product of silk

A nano-graphene, high thermal conductivity technology, applied in the directions of additional food elements, applications, animal feed, etc., can solve the problems of not giving the thermal conductivity characteristics of silk, the decline of silk quality and yield, and the minimal modification effect, so as to eliminate the need for Device-supported, well-absorbed, easy-to-control effects

Active Publication Date: 2019-06-11
QINGDAO TECHNOLOGICAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two patents need to screen and process the functional particles used in the feeding process. Due to the large particle size, it is easy to affect the feeding growth of silkworms, resulting in a decrease in silk quality and yield
The results also show that more functional particles exist in sericin, and when silk is used, most of it needs to be degummed, so its modification effect is negligible
Moreover, both of them did not give the thermal conductivity characteristics of the obtained silk, but only indicated that the obtained silk has some functions of the added particles, and the applicable range is narrow.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A silkworm-breeding method of adding food to nano-graphene for preparing silk with high thermal conductivity, first preparing mulberry leaves containing medicaments, specifically:

[0033] (1) the size range of the single-layer graphene powder is that the sheet diameter range is 0.5~1.6 μm, the thickness range is infinitesimal~0.8nm, and the nano-graphene with a single layer rate of 80% is dissolved in the water that has added the PVP solution, Make nano-graphene solution;

[0034] (2) Ultrasonic the nano-graphene solution for 30min, so that the nanoparticles are dispersed uniformly to obtain a nano-graphene dispersion;

[0035] The prepared nano-graphene dispersion is evenly coated on the surface of mulberry leaves, and then the mulberry leaves containing the drug are dried at room temperature and then fed to silkworms, and the silkworms absorb nano-graphene into silk glands and finally in spinning In the process, nano-graphene is combined into silk to obtain silk wit...

Embodiment 2

[0044] A silkworm breeding method of adding food to nano-graphene for preparing silk with high thermal conductivity, first preparing mulberry leaves containing medicaments, specifically:

[0045] (1) the size range of the single-layer graphene powder is that the sheet diameter range is 1.7~3.5 μm, the thickness range is infinitesimal~0.8nm, and the nano-graphene with a single layer rate of 80% is dissolved in the water that has added the PVP solution, Make nano-graphene solution;

[0046] (2) Nano graphene solution ultrasonic 40min, make nano particle disperse evenly, obtain nano graphene dispersion liquid;

[0047]The prepared nano-graphene dispersion is evenly coated on the surface of mulberry leaves, and then the mulberry leaves containing the drug are dried at room temperature and then fed to silkworms, and the silkworms absorb nano-graphene into silk glands and finally in spinning In the process, nano-graphene is combined into silk to obtain silk with high thermal conduc...

Embodiment 3

[0056] A silkworm breeding method of adding food to nano-graphene for preparing silk with high thermal conductivity, first preparing mulberry leaves containing medicaments, specifically:

[0057] (1) the size range of the single-layer graphene powder is that the sheet diameter range is 3.6~5 μm, the thickness range is infinitesimal~0.8nm, and the nano-graphene with a single layer rate of 80% is dissolved in the water that has added the PVP solution, and the preparation into nano-graphene solution;

[0058] (2) Nano graphene solution ultrasonic 45min, make nano particle disperse evenly, obtain nano graphene dispersion liquid;

[0059] The prepared nano-graphene dispersion is evenly coated on the surface of mulberry leaves, and then the mulberry leaves containing the drug are dried at room temperature and then fed to silkworms, and the silkworms absorb nano-graphene into silk glands and finally in spinning In the process, nano-graphene is combined into silk to obtain silk with ...

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Abstract

The invention discloses a method for preparing high-thermal-conductivity silk by feeding silkworms with nano graphene and a product of the silk, and belongs to the fields of silk fibers and modification thereof. The method specifically comprises the steps that mulberry leaves are evenly coated with the nano graphene, the nano graphene is made to enter silk glands of the silkworms by utilizing theabsorption conversion function of the silkworms, and the high-thermal-conductivity silk containing the nano graphene is obtained through self-cocooning of the silkworms. On the premise that the natural quality of the silk is not damaged, the silk is modified, and the obtained silk has good thermal conductivity.

Description

technical field [0001] The invention relates to the field of silk fiber and its modification, in particular to a nano-graphene feeding silkworm breeding method for preparing silk with high thermal conductivity and its products. Background technique [0002] Silk and silk fibroin have greatly promoted the development of various new integrated and miniaturized biological functional systems. In addition to the common properties of biomaterials, the unique advantages of silk fibroin mainly include outstanding mechanical properties, excellent optical properties, and flexible chemical modification. As the technological cornerstone of silk fibroin-based micro-nano devices and systems, various advanced micro-nano-fabrication technologies have been used for their micro-nano-fabrication and structuring. The characteristics of silk make silk no longer limited to the application in the traditional textile field, and more and more researches on electronic device materials have been appl...

Claims

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Application Information

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IPC IPC(8): A01K67/04A23K20/20A23K50/90
CPCA01K67/04A23K20/20A23K50/90
Inventor 林欢寇爱静柳守婷刘心颖董华
Owner QINGDAO TECHNOLOGICAL UNIVERSITY
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