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An InGaN-based micron LED photoelectric detector array and application thereof

A technology of photodetectors and LED devices, which is applied in the field of visible light communication and can solve problems such as limiting data rates

Inactive Publication Date: 2019-06-07
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, one of the technical challenges of VLC is that the low modulation bandwidth (several MHz) of commercial high-power LEDs limits the achievable data rate. To overcome this problem, researchers have made numerous improvements to increase the modulation bandwidth and data rate

Method used

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  • An InGaN-based micron LED photoelectric detector array and application thereof
  • An InGaN-based micron LED photoelectric detector array and application thereof
  • An InGaN-based micron LED photoelectric detector array and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] see image 3 , shows a structural diagram of an experimental device for performing single-channel visible light communication using an InGaN micro-LED photodetector array according to a specific embodiment of the present invention.

[0040] The experimental device includes a signal encoding and input unit 1, such as a waveform generator, voice signal, and video signal, used to give a communication signal source; a laser diode 2 as a transmitter, used to send visible light, outside the laser diode and a micron LED photoelectric The detector has a lens series 3 to collimate the emitted light and focus the received light; the light is incident on the micron LED photodetector array 4 for light reception, signal decoding and output unit 5, such as oscilloscope, voice signal and video signal decoding The unit detects the signal received by the micro LED photodetector array 4 .

[0041] In this embodiment, a 405nm laser diode is used as a light transmitter for single-channel ...

Embodiment 2

[0046] see Figure 6 , shows a structural diagram of an experimental device for performing multi-channel (2×2 MIMO) visible light communication using the above-mentioned InGaN micro-LED photoelectric array device according to a specific embodiment of the present invention.

[0047] The experimental setup includes a signal encoding and input unit 1, such as a waveform generator, used to give a parallel communication signal source; a plurality of laser diodes 2, used to transmit visible light; a lens series 3, to collimate and focus the emitted light to a micron LED photoelectric The detector array has 4 receiving ends.

[0048] In this embodiment, two 405nm laser diodes are used as optical transmitters for dual-channel (2×2MIMO) visible light communication; the experiment adopts high-speed parallel communication of on-off keying (OOK) modulation scheme, and the modulated emitted light passes through 1m Free space distance transmission; between each laser diode and the micron L...

Embodiment 3

[0052] see Figure 9 , shows a structural diagram of an experimental device for performing duplex visible light communication using the above-mentioned InGaN micro LED photodetector array according to a specific embodiment of the present invention.

[0053] The experimental setup includes uplink and downlink. Signal encoding and input unit 1, such as a waveform generator, to give the source of the uplink communication signal; laser diode 2, to transmit visible light; lens series 3, to collimate and focus the emitted light to the array of micron LED photodetectors 4 At the receiving end, the signal converted by the micron LED photodetector is decoded and output unit 5 , for example, the signal is displayed and analyzed by an oscilloscope 5 . Downlink, another signal encoding and input unit 1, such as a waveform generator, is used to transmit downlink signals; the micron LED array 6 is used as the transmitting end for transmitting visible light; the lens series 3 collimates and...

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Abstract

An InGaN-based micron LED photoelectric detector array comprises a substrate and a plurality of micrometer LED devices distributed on the substrate in an array mode, and the basic structure of each micrometer LED device is n-GaN, InGaN / GaN quantum well, p-GaN epitaxial layer structure; the sizes of all the micrometer LED devices are equal or different and are in any shape, the typical size of theround micrometer LED ranges from 1 micrometer to 500 micrometers, and the substrate of the micrometer LED is any substrate. In addition, the photodetector array can also be used for display, illumination and solar cells. The photodetector array of the present invention can be used for high speed parallel visible light communication, and has a low bit error rate at several Mbps to several Gbps through a photodiode array of different sizes of 1 to 100 [mu]m.. The micrometer LED can be used for a transmitting device and a receiving device for high-speed optical communication, can realize parallel data transmission, and can convert received optical signals into current to be used as a solar cell to realize self power supply.

Description

technical field [0001] The present invention relates to the field of visible light communication, in particular to an InGaN micro-LED photodetector array, which can be applied to a transmitting device, a receiving device, and a self-powered solar cell device for high-speed parallel visible light communication. Background technique [0002] With the unprecedented growth of wireless communication demand, traditional communication based on limited radio frequency spectrum, such as 3G / 4G, is facing the challenge of supporting high-speed communication demand. Therefore, new wireless transmission technology needs to be used, and wireless optical communication has been proved to have the advantages of no need to purchase spectrum resources, high security, high privacy, and strong anti-electromagnetic interference capability. Due to the rapid development of solid-state lighting technology, especially the remarkable achievements in gallium nitride (GaN) research, visible light commun...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04B10/116H04B10/69H01L27/15
Inventor 田朋飞刘晓艳林润泽方志来闫春辉张国旗
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON
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