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RC-IGBT structure and manufacturing method thereof

A manufacturing method and back metal technology, applied to the RC-IGBT structure, the manufacturing field of the RC-IGBT structure, can solve problems such as complex process flow and increased cost

Inactive Publication Date: 2019-05-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The backside photolithography of the existing RC-IGBT manufacturing method will increase the cost and complicate the process flow

Method used

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  • RC-IGBT structure and manufacturing method thereof
  • RC-IGBT structure and manufacturing method thereof
  • RC-IGBT structure and manufacturing method thereof

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Embodiment Construction

[0047] Such as Figure 5 As shown, the first embodiment of the RC-IGBT structure provided by the present invention, taking the trench gate RC-IGBT as an example, includes forming a collector electrode 9 on the back metal electrode 4.1, forming a buffer layer 8 on the collector electrode 9, and forming a buffer layer 8 on the buffer layer 8. A drift region 7 is formed, a body region 6 is formed on the drift region 7, a trench is arranged in the body region 6 and the drift region 7, an emitter 5 is formed in the body region 6 on both sides of the trench, and a gate oxide layer 2 is formed on the inner wall of the trench , the polysilicon gate 1 is formed in the gate oxide layer 2, the interlayer dielectric 3 is arranged in the front metal electrode 4.2 on the trench; a plurality of protrusions 8' are formed on the back metal electrode 4.1, and the protrusions 8' pass through the collector 9 extends into the buffer layer 8. Wherein, the emitter 5 is an N-type heavily doped regio...

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Abstract

The invention discloses an RC-IGBT structure, comprising a collector electrode formed on a back metal electrode, wherein a buffer layer is formed on the collector electrode, a drift region is formed on the buffer layer, a body region is formed on the drift region, a trench is arranged in the body region and the drift region, an emitter is formed in the body region on two sides of the trench, a gate oxide layer is formed on the inner wall of the trench, a polycrystalline silicon gate is formed in the gate oxide layer, and an interlayer medium is arranged in a front metal electrode on the trench; a plurality of short circuit points are formed on the back metal electrode, and the short circuit points penetrate through the collector electrode and extend into the buffer layer. The invention also discloses a preparation method of the RC-IGBT structure. Compared with the existing RC-IGBT structure, the preparation method has the advantages that the function of the existing RC-IGBT structure is realized, and the production cost of the RC-IGBT structure is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an RC-IGBT structure. The present invention also relates to a manufacturing method of the RC-IGBT structure. Background technique [0002] Insulated gate bipolar transistor (Insulate-Gate Bipolar Transistor—IGBT) combines the advantages of power transistor (Giant Transistor—GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications; IGBT is also a three-terminal Devices: Gate, Collector and Emitter. IGBT (Insulated Gate Bipolar Transistor) is a MOS structure bipolar device, which belongs to a power device with high-speed performance of power MOSFET and low resistance performance of bipolar. The application range of IGBT is generally in the area with a withstand voltage of 600V or more, a current of 10A or more, and a frequency of 1kHz or more. It is mostly used in industrial motors, civilian small-capacity motors, convert...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/417H01L21/331
Inventor 蒋章刘须电缪进征
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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