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Phase change memory and preparation method thereof

A technology of phase change memory and phase change materials, which is applied in the direction of electrical components, etc., can solve the problems of low pass rate of phase change memory products, and achieve the effects of low implementation difficulty, precise alignment, and improved product pass rate

Pending Publication Date: 2019-05-14
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
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Problems solved by technology

[0004] However, the product qualification rate of the phase change memory prepared by the existing phase change memory preparation method is low

Method used

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  • Phase change memory and preparation method thereof
  • Phase change memory and preparation method thereof

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preparation example Construction

[0043] In order to solve the above problems, the present invention provides a phase change memory and a preparation method thereof, the preparation method comprising: providing a substrate, the substrate has a dielectric layer, and the dielectric layer has a groove running through the thickness of the dielectric layer; A conductive layer is filled in the trench, and the top of the conductive layer is lower than the top of the dielectric layer; a heating electrode layer is formed on the top of the conductive layer and the exposed groove sidewall of the conductive layer.

[0044] Wherein, a conductive layer is filled in the groove, and the top of the conductive layer is lower than the top of the first dielectric layer, so that the exposed side walls of the conductive layer and the top of the conductive layer are formed to form a heating layer. The electrode layer provides a space, so that the bottom of the formed heating electrode layer coincides with the top of the conductive laye...

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Abstract

The invention relates to a phase change memory and a preparation method thereof. The preparation method comprises the steps that a substrate is provided, wherein a dielectric layer is arranged on thesubstrate, and a groove penetrating through the thickness of the dielectric layer is formed in the dielectric layer; the groove is filled with a conductive layer, and the top of the conductive layer is lower than the top of the dielectric layer; and a heating electrode layer is formed on the top of the conductive layer and on the side wall of the groove exposed by the conductive layer. The preparation method can realize accurate alignment of the heating electrode layer and the conductive layer, is small in implementation difficulty, and is beneficial to improving the product qualification rateof the prepared phase change memory.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory and a preparation method thereof. Background technique [0002] Phase change random access memory (PCRAM) uses phase change materials as storage media to store information, and phase change materials can be reversible between crystalline and amorphous states under heat treatment of current pulses of different amplitudes and durations. Phase change, and exhibit a difference in conductivity, the above properties of phase change materials can be used to achieve non-volatile storage of data. [0003] In a phase-change memory, the phase-change material is in contact with a heating electrode layer, which in turn is in contact with a conductive layer, which is used to conduct a current pulse, and the heating electrode layer is affected by the current pulse to generate heat, thereby The phase change material is heated to induce a phase change of the phase ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 王敬平向阳辉汪新学
Owner SEMICON MFG INT (SHANGHAI) CORP
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