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A laser electrochemical backside cooperative micromachining method and device for semiconductor materials

A semiconductor and electrochemical technology, applied in metal material coating process, semiconductor/solid-state device manufacturing, liquid chemical plating, etc., can solve the problems that the technical applicability needs to be further expanded, and the localized processing of the back of the material has not been discussed. Achieve no residual stress, good surface quality, no thermal damage

Active Publication Date: 2020-11-20
JIANGSU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, laser etching and electrochemical dissolution of the material occur on the same side of the material, and the energy of the incident laser beam will be affected by the electrolyte flow. At the same time, the possibility of localized processing on the back of the material has not been discussed, and the technical applicability needs to be further developed. expand

Method used

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  • A laser electrochemical backside cooperative micromachining method and device for semiconductor materials
  • A laser electrochemical backside cooperative micromachining method and device for semiconductor materials
  • A laser electrochemical backside cooperative micromachining method and device for semiconductor materials

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Embodiment 1

[0044] combined with figure 2 , this embodiment is a laser electrolysis backside collaborative micromachining method for semiconductor materials based on localized conductive channels. The laser beam 2 generated by the laser 1 is adjusted and transmitted by an external optical path and then focused on the surface of the semiconductor material 9, and the thermal effect of the laser is used to process high-efficiency materials. Removal, complete micro-hole, micro-groove processing. At the same time, the thermal effect of the laser generates a local temperature field around the irradiated area, which locally enhances the conductivity of semiconductor materials such as single crystal silicon. On this basis, using a stable low-voltage electrolyte beam generating device to introduce a low-voltage electrolyte beam on the back of the semiconductor material 9, in the region where the conductivity is enhanced, electrochemical anodic dissolution is introduced locally, and the laser-etch...

Embodiment 2

[0045] Embodiment 2: This embodiment is a semiconductor material laser electrolysis back-facing cooperative micromachining system based on a localized conductive channel, including an optical path system, a stable low-pressure jet flow generation system, and an electrolytic processing system; the optical path system includes a laser 1 and an external optical path, wherein the external The optical path includes a beam expander 3 , a mirror 4 , a vibrating mirror 5 and a lens 6 . The laser 1 outputs the laser beam 2, the diameter of the laser beam is enlarged by the beam expander 3, the direction is adjusted by the reflector 4, the movement form of the beam is controlled by the vibrating mirror 5, and finally after being focused by the lens 6, it is irradiated to the surface of the semiconductor material 9, and the A localized conductive channel 22 is formed in the semiconductor material 9 . The generation of the laser beam 2 and the movement of the vibrating mirror 5 are all co...

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Abstract

The invention discloses a semiconductor material laser electrochemical back-to-back cooperative micromachining method and device, which belong to the field of special processing. To localize and enhance the conductivity of the material, form a conductive channel through which the current passes preferentially, and at the same time introduce electrolytic processing on the back of the material to realize rapid electrochemical dissolution on the back of the laser irradiation area; by controlling parameters such as laser energy, the upper surface laser scanning / Etching and electrolytic machining of the lower surface are carried out synchronously and synchronously; by controlling the time-space distribution of incident laser energy and other measures, the electrolytic machining rate of the lower surface of the material can be dynamically adjusted; the device includes a laser, an external optical circuit, an electrolytic power supply, and an electrolytic machining tank; its device The distance between cathode and anode and the space angle with the incident laser beam can be adjusted, and the bubbles generated by hydrogen evolution at the cathode can be removed in time by flushing liquid, so as to ensure stable electrochemical anodic dissolution.

Description

technical field [0001] The invention relates to a processing method and device for processing micro-slits, holes, grooves and other structures in the field of special processing, in particular to a laser electrochemical back-facing cooperative micro-processing method and device for semiconductor materials. Background technique [0002] Semiconductor materials represented by silicon and germanium have good structural and functional properties, and are widely used in chips, photovoltaics, medical devices, micro-electromechanical systems and other fields. Processing microstructures with specific morphology on the surface of semiconductor materials can achieve multiple functions, for example: submicron-scale periodic microgroove structure can enhance the anti-reflection performance of the material surface; honeycomb densely distributed smooth micropit groups can form microconcave lenses Array; the regular microstructure of the surface helps to change the hydrophilic properties o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/00
CPCB23K26/00C25F3/12C25F7/00C23C14/08C23C18/12H01L21/268
Inventor 朱浩朱帅杰张朝阳徐坤王安斌赵斗艳
Owner JIANGSU UNIV
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