Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device and method for dynamic growth of large-scale perovskite single crystal

A technology of growth device and growth method, applied in the field of dynamic growth device of large-size perovskite single crystal, can solve problems such as affecting the application of perovskite materials, weak research on single crystal materials, and difficulty in obtaining perovskite crystals.

Active Publication Date: 2020-11-20
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, perovskite materials have made a lot of progress in polycrystalline thin films, but the research on single crystal materials is relatively weak, mainly because it is difficult to obtain large-sized and high-quality perovskite crystals due to the limitation of growth technology, and then Affected the application of perovskite materials in practice

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for dynamic growth of large-scale perovskite single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1 relates to the growth of large-scale methylamine lead bromide crystal, comprises the steps:

[0031] Step a: Pretreatment of the growth device: cleaning and drying the crystal growth cavity and the raw material supply cavity; connecting the upper solution outlet of the crystal growth cavity 3 with the upper solution outlet of the raw material supply cavity 4 through the first section of silica gel tube 5 , and connect the lower solution outlet of the crystal growth chamber 3 with the lower solution outlet of the raw material supply chamber 4 through the second section of silicone tube 6 .

[0032] Step b: preparing methylamine bromide, and further preparing methylamine lead bromide solution.

[0033] In an ice-water bath, mix methylamine-ethanol solution and hydrobromic acid at a molar ratio of 1:1.2 and stir for 2 hours, then evaporate at 60°C under low vacuum, wash and recrystallize three times with ethanol and ether, put it in a fume hood to air-dry, and...

Embodiment 2

[0041] Example 2 is also the growth of large-sized methylammonium lead bromide crystals. The difference from Example 1 is that in step f, the crystal growth temperature is 70°C, and the flow rate of the peristaltic pump is 30ml / min.

Embodiment 3

[0043] Embodiment 3 relates to the growth of large-scale methylammonium iodide lead crystal, comprises the steps:

[0044] Step a: Pretreatment of the growth device: cleaning and drying the crystal growth cavity and the raw material supply cavity; connecting the upper solution outlet of the crystal growth cavity 3 with the upper solution outlet of the raw material supply cavity 4 through the first section of silica gel tube 5 , and connect the lower solution outlet of the crystal growth chamber 3 with the lower solution outlet of the raw material supply chamber 4 through the second section of silicone tube 6 .

[0045] Step b: preparing methylamine iodide, and further preparing methylamine iodide lead solution.

[0046] In an ice-water bath, mix methylamine-ethanol solution and hydroiodic acid at a molar ratio of 1:1.2 and stir for 2 hours, then evaporate at 60°C under low vacuum, wash and recrystallize three times with ethanol and ether, put it in a fume hood to air-dry, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device and a method for dynamic growth of large-sized perovskite monocrystals, and relates to the technical field of crystal materials. The method is based on power cycle and temperature inversion crystallization to grow the perovskite monocrystals having a high crystal quality. The device utilizes a peristaltic pump to realize non-contact circulating flow of perovskitesolutions in the device, so a high-concentration perovskite solution in a raw material supply cavity is continuously transported into a crystal growth cavity, and a low-concentration perovskit solution in the crystal growth cavity enters the raw material supply cavity. The rotational speed of the peristaltic pump is adjusted to control the dissolvability interaction speed of the solutions in orderto ensure the stable growth of the crystals. The device and the method can realize the continuous growth of the perovskite crystals to obtain the large-sized perovskite monocrystal, so the application of the perovskite crystals in various fields is benefited.

Description

technical field [0001] The invention belongs to the technical field of crystal materials, and in particular relates to a power growth device and method for a large-size perovskite single crystal. Background technique [0002] Perovskite crystals are cheap, easy to prepare, and have excellent photoconductivity, ion conductivity, and high carrier mobility, and their photoelectric conversion efficiency is comparable to that of crystalline silicon and other semiconductors with excellent performance. Since 2009, perovskite solar cells have developed rapidly, and their photoelectric conversion efficiency has broken through from 3.8% to 22.1% after eight years. With the deepening of research, the application range of perovskite crystals is increasing, such as light-emitting diodes, field-effect transistors, lasers, and even radiation detectors. [0003] At present, perovskite materials have made a lot of progress in polycrystalline thin films, but the research on single crystal ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/54C30B30/00
CPCC30B29/54C30B30/00
Inventor 徐强聂婧欧阳晓平
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com