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Optimization method for large-power green-light LED epitaxial structure of Si substrate

A technology of epitaxial structure and optimization method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of less than 40% external quantum efficiency, unsatisfactory development of green LED, and limited effect, so as to alleviate the decline of quantum efficiency, Effect of reducing carrier leakage and reducing polarization electric field

Inactive Publication Date: 2019-03-29
江苏晶曌半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Over the years, the luminous efficiency of purple and blue LEDs has developed rapidly. The external quantum efficiency of AlGaInN blue LEDs has exceeded 80%. However, the development of green LEDs is not satisfactory, and the external quantum efficiency of AlGaInN green LEDs is not enough. 40%
However, these methods are independently carried out for the improvement of the photoelectric performance of green LEDs, and some interfering factors have not been cross-researched, and the final effect is limited.

Method used

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  • Optimization method for large-power green-light LED epitaxial structure of Si substrate
  • Optimization method for large-power green-light LED epitaxial structure of Si substrate
  • Optimization method for large-power green-light LED epitaxial structure of Si substrate

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Embodiment 1

[0030] This embodiment provides a method for optimizing the epitaxial structure of a high-power green LED on a Si substrate, which is grown in an MOCVD system, using TMAl, TMGa, NH 3 and CP 2 Mg is used as Al source, Ga source, N source and Mg dopant respectively, H 2 as a carrier gas. The method for optimizing the epitaxial structure of high-power green LEDs on Si substrates specifically includes the following steps:

[0031] (1-1) Clean the purchased Si substrate (Si(111)) with a thickness of 800 microns in ethanol, acetone and deionized water for 20 minutes, dry it at 100°C and place it in a MOCVD glove box, and then use a suction cup to move the substrate Go to the substrate tray in the reaction chamber, raise the surface temperature of the epitaxial wafer to 1050°C in a hydrogen atmosphere, heat treat for 5 minutes to completely remove the surface oxide, and obtain Si substrate 1;

[0032] (1-2) Cool down the reaction chamber to 1000°C, first pass trimethylaluminum TMA...

Embodiment 2

[0047] This embodiment provides a method for optimizing the epitaxial structure of a high-power green LED on a Si substrate, which is grown in an MOCVD system, using TMAl, TMGa, NH 3 and CP 2 Mg is used as Al source, Ga source, N source and Mg dopant respectively, H 2 as a carrier gas. Specifically include the following steps:

[0048] (2-1) Clean the purchased Si substrate (Si(111)) with a thickness of 800 microns in ethanol, acetone and deionized water for 30 minutes, dry it at 80°C and place it in the MOCVD glove box, and then use the suction cup to move the substrate Go to the substrate tray in the reaction chamber, raise the surface temperature of the epitaxial wafer to 1100°C in a hydrogen atmosphere, heat treat for 5 minutes to completely remove the surface oxide, and obtain Si substrate 1;

[0049] (2-2) Cool down the reaction chamber to 1000°C, first pass TMAl for 10s, and then pass NH 3 , the pressure is 200 mbar, the V / III molar ratio is 400, and a medium-temper...

Embodiment 3

[0063] In this embodiment, a method for optimizing the epitaxial structure of a high-power green LED on a Si substrate is grown in an MOCVD system, using TMAl, TMGa, NH 3 and CP 2 Mg is used as Al source, Ga source, N source and Mg dopant respectively, H 2 as a carrier gas. Specifically include the following steps:

[0064] (3-1) Clean the purchased Si substrate (Si(111)) with a thickness of 800 microns in ethanol, acetone and deionized water for 30 minutes, dry it at 90°C and place it in a MOCVD glove box, and then use a suction cup to move the substrate Go to the substrate tray in the reaction chamber, raise the surface temperature of the epitaxial wafer to 1100°C in a hydrogen atmosphere, heat treat for 3 minutes to completely remove the surface oxide, and obtain Si substrate 1;

[0065] (3-2) Cool down the reaction chamber to 900°C, first pass TMAl for 15s, and then pass NH 3 , the pressure is 300 mbar, the V / III molar ratio is 500, and a medium-temperature AlN buffer ...

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Abstract

The invention provides an optimization method for a large-power green-light LED epitaxial structure of a Si substrate, and the method comprises the following steps: performing the Si substrate processing, depositing an AlN buffer layer on the Si substrate, and then sequentially growing an N-GaN layer, a low-temperature GaN layer, a 10-cycle InGaN / GaN superlattice layer, an electron injection layer, a 6-cycle InGaN / GaN blue MQW layer, a 7-cycle InGaN / GaN green-light MQW layer, a P-AlGaN electron blocking layer and a P-GaN layer, and continuing to grow a highly-Mg-doped P-GaN layer; then performing cooling to 710-730 DEG C, performing annealing for 30 to 60 minutes, and then performing the furnace cooling to obtain the large-power green-light LED epitaxial structure of the Si substrate in anoptimized design. The method can optimize the N-type layer doping, the thickness of the low-temperature GaN layer in the intercalation layer, the InGaN / GaN superlattice layer In component and the blue multi-quantum well structure well thickness, so that the electrons can be cooled at a large current working density, thereby reducing carrier leakage, reducing a polarization electric field in a quantum well, effectively alleviating the quantum efficiency degradation and improving the luminous efficiency of a device.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronics, and in particular relates to a method for optimizing the epitaxial structure of a Si substrate high-power green LED. Background technique [0002] From the perspective of saving energy and improving the color quality of the light source, the white light lighting method based on three primary colors (red, green, blue) light-emitting diodes is undoubtedly the best choice. Over the years, the luminous efficiency of purple and blue LEDs has developed rapidly. The external quantum efficiency of AlGaInN blue LEDs has exceeded 80%. However, the development of green LEDs is not satisfactory, and the external quantum efficiency of AlGaInN green LEDs is not enough. 40%. At present, some effective measures have been proposed to improve the quantum efficiency of green LEDs, mainly including reducing the defect density in the epitaxial layer and adopting a new thick InGaN quantum well layer compo...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/02H01L33/06H01L33/30
Inventor 白俊春周小伟景文甲李培咸平加峰
Owner 江苏晶曌半导体有限公司
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