Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for preparing an inverted octagonal pyramid-shaped patterned silicon substrate

A patterned, silicon substrate technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of inability to prepare pyramids, and difficult to etch pyramid-shaped patterned silicon substrates, and achieve excellent results. Light trapping ability, the effect of reducing reflectivity, increasing optical path length

Active Publication Date: 2020-08-25
HARBIN INST OF TECH
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the current dry etching method cannot prepare pyramidal and pyramidal patterned silicon substrates and it is difficult to etch to prepare patterned silicon substrates with high index crystal planes, and to provide an inverted octagonal pyramidal patterned silicon substrate Bottom preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing an inverted octagonal pyramid-shaped patterned silicon substrate
  • A method for preparing an inverted octagonal pyramid-shaped patterned silicon substrate
  • A method for preparing an inverted octagonal pyramid-shaped patterned silicon substrate

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0020] Specific Embodiment 1: In this embodiment, a method for preparing an inverted octagonal truss-shaped patterned silicon substrate is carried out according to the following steps:

[0021] 1. Preparation of silicon dioxide mask: using a photolithography process to prepare a circular hole-shaped silicon dioxide mask on a single crystal silicon substrate to obtain a silicon wafer covered with a circular hole-shaped silicon dioxide mask;

[0022] 2. Wet etching: place the silicon wafer covered with a round-hole silicon dioxide mask on a polytetrafluoroethylene flower basket and suspend it in the TMAH solution, then heat the TMAH solution to 25-80°C, and then etch , to obtain the etched silicon wafer;

[0023] 3. Removing the silicon dioxide mask: Take the PTFE flower basket containing the etched silicon wafer out of the TMAH solution and rinse it with deionized water, then place it in the BOE solution for etching for 2-5 minutes, and then rinse it with deionized water And b...

specific Embodiment approach 2

[0031] Embodiment 2: This embodiment differs from Embodiment 1 in that the silicon dioxide mask with circular holes in step 1 is a periodic silicon dioxide mask with circular holes. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0032] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the concentration of the TMAH solution in step 2 is 1wt%-4wt%, and the etching is 1-8min. Others are the same as in the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method for an inverted octagonal-frustum-shaped patterned silicon substrate, and aims to solve the problems that pyramid-shaped and frustum-shaped patterned silicon substrates cannot be prepared through dry etching at present and a patterned silicon substrate with a high-index crystal face cannot be easily prepared through etching. The method comprises the steps: preparing a periodic silicon dioxide mask, performing wet etching and removing the silicon dioxide mask. The substrate has a high-exponential crystal face, and the root-mean-square roughness of the high-exponential crystal face is about 10 times higher than that of a low-exponential crystal face and about 4 times higher than that of a (100) crystal face. Moreover, the rough surface can reflect incident light for multiple times and increase an optical path, so that the light reflectivity of the surface is reduced. Therefore, compared with an inverted pyramid structure only having a low-index crystal face, the inverted octagonal-frustum-shaped patterned silicon substrate has better light capture capability. The method is applied to the field of preparation of the patterned silicon substrate.

Description

technical field [0001] The invention relates to a method for preparing an inverted octagonal pyramid-shaped patterned silicon substrate. Background technique [0002] In silicon solar cells, the role of silicon is to absorb solar energy and convert it into electricity, so it is necessary to reduce the reflection of sunlight on the silicon substrate. At present, the most commonly used methods for reducing the surface reflectance of solar cells include surface anti-reflection coating and surface roughening and texturing. Among them, the surface roughening treatment not only increases the optical path of the incident light, but also increases the number of reflections of the incident light, thereby reducing the reflectivity of the light, and achieving the purpose of improving the efficiency of the solar cell. [0003] At present, KOH wet etching and ICP dry etching are often used to roughen the surface of silicon substrates, but the anisotropy of these two methods is weak, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02366H01L31/1804Y02P70/50
Inventor 张丹陈远东甘阳申健冯志红张飞虎
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com