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Preparation method of dual-band uncooled infrared detector based on MEMS resonator

A micro-electromechanical resonator and uncooled infrared technology, applied in the field of infrared detection, can solve the problems of limited material selection, affect the performance of uncooled infrared detectors, increase the thickness of the absorbing layer, etc., and achieve reliable infrared detection performance and high stability The effect of increasing the thickness of the absorbing layer

Active Publication Date: 2020-09-04
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

However, this method is limited by the stress of material preparation, the range of material selection is limited and the thickness of the absorbing layer is increased, which will affect the performance of uncooled infrared detectors

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  • Preparation method of dual-band uncooled infrared detector based on MEMS resonator
  • Preparation method of dual-band uncooled infrared detector based on MEMS resonator
  • Preparation method of dual-band uncooled infrared detector based on MEMS resonator

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Embodiment Construction

[0048] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0049] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0050] The present invention is based on the preparation method of the dual-band uncooled infrared detector based on the micro-electromechanical resonator 2 . Specific steps are as follows:

[0051] S1. Obtain silicon substrate 2-6

[0052] like figure 1 As shown, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-throw sil...

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Abstract

The preparation method of the dual-band uncooled infrared detector based on the micro-electromechanical resonator relates to the field of infrared detection technology, and solves the problems of the low absorption rate of the infrared detector obtained by the preparation method and the increase of the thickness of the absorption layer by dual-band absorption, including the preparation of micro-electromechanical resonance The device; the dielectric layer and the metal array layer are sequentially prepared on it; the read-out integrated circuit substrate is prepared; the read-out integrated circuit substrate and the micro-electromechanical resonator are connected; the metal array layer includes a plurality of metal blocks composed of two different sizes metal unit. The preparation method of the present invention has the advantages of integrated manufacturing, batch production, and low cost; by integrating the metal array layer on the surface of the micro-electromechanical resonator, the enhanced absorption of the infrared spectrum by the uncooled infrared detector is realized, and the dual-band is realized by changing the size of the metal block , does not increase the thickness of the absorbing layer and has excellent detection performance of the infrared detector; the prepared detector not only has the advantages of traditional uncooled infrared detection, but also has fast response and high sensitivity.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a preparation method of a dual-band uncooled infrared detector based on a micro-electromechanical resonator. Background technique [0002] According to the working temperature, infrared detectors are generally divided into two categories: cooling type and uncooling type. Cooled infrared detectors are usually made of semiconductor materials. Using the photoelectric effect of some materials, the photosensitive material absorbs photons, causing changes in electrical parameters. In order to suppress hot carriers and noise, the operating temperature of cooled infrared detectors is usually below 77K. It needs to be refrigerated by a refrigerator or liquid nitrogen, which will result in relatively large volume and weight, and relatively expensive prices. Uncooled infrared detectors are also called room temperature detectors, which can work at room temperature without refri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/10
CPCG01J5/10
Inventor 陶金梁中翥孟德佳吕金光秦余欣梁静秋罗奕
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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