Semiconductor device and manufacturing method thereof

Abstract

The present invention provides a semiconductor device and a manufacturing method thereof. The method comprises: providing a semiconductor substrate; forming a high-k dielectric layer on the semiconductor substrate; forming a cap layer or a work function metal layer on the high-k dielectric layer; performing ion implantation on the cap layer or the work function metal layer; and forming a metal gate on the cap layer or the work function metal layer. According to the semiconductor device manufacturing method provided by the present invention, ion implantation is performed after forming a cap layer or a work function metal layer, and diffusion of metal atoms in a subsequently formed metal gate is avoided, so that an effective work function of the semiconductor device is improved, and the performance and reliability of the semiconductor device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] The main device in integrated circuits (ICs), especially VLSIs, is metal-oxide-semiconductor field-effect transistors (MOSs). High performance and more functional integrated circuits require greater component density, and the size, size, and space of individual components, between components, or by themselves need to be further reduced. [0003] For CMOS with more advanced technology nodes, high-k last / metal gate last (high-k and metal gate last) technology has been widely used in CMOS devices to avoid damage to devices by high-temperature processing processes. In current high-k / metal gate-last technology, the formation of interfacial layer (IL) and high-k (HK) dielectric layer is followed by deposition of work function metal layer (WF) and metal Grid (MG). [0004] However, in the ...

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Problems solved by technology

[0004] However, in the existing high-k dielectric layer / metal gate last process, the material of the metal gate is usually aluminum, so aluminum atoms are prone to diffuse, and aluminum atoms diffuse to the work function metal layer or even the high-k dielectric layer , which reduces the effective work function (eWF) of the device, thereby affecting the performance and reliability of the device. Therefore, preventing the atomic diffusion of the metal gate is the key to improving the performance of semiconductor devices

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