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Preparation method of wedge-shaped thin film

A wedge-shaped and thin-film technology is applied in the field of preparation of wedge-shaped thin films, which can solve the problems of forming cracks, affecting resonator performance and ESD reliability, and poor piezoelectric film performance, and achieving the effect of improving performance and reliability.

Pending Publication Date: 2017-09-22
HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the edge of the lower electrode patterned by the commonly used method is generally at a right angle, the piezoelectric film cannot grow along the required direction perpendicular to the substrate surface at this edge, which will cause poor performance of the piezoelectric film in this part. Well, even cracks can form, greatly affecting the performance and ESD reliability of the resonator

Method used

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  • Preparation method of wedge-shaped thin film
  • Preparation method of wedge-shaped thin film
  • Preparation method of wedge-shaped thin film

Examples

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Embodiment 1

[0026] Fig. 1 is the preparation process flowchart of a kind of wedge shape film of the embodiment of the present invention, and this preparation process comprises:

[0027] (a) Prepare a silicon wafer 100 polished on one or both sides, with the polished side up, and perform standard cleaning. As shown in Figure 1(a).

[0028] (b) Deposit film 200 on silicon wafer 100, for example film 200 is Mo; Its thickness is h 0 , such as 470nm. As shown in Figure 1(b).

[0029] (c) Deposit a thin film 300 on the thin film 200, for example, the thin film 300 is A1; its thickness is h 1 , for example 160nm. As shown in Figure 1(c).

[0030] (d) throw photoresist 400 evenly on film 300, its thickness is h 2, such as 1um. As shown in Figure 1(d).

[0031] (e) Photolithography and development are performed on the photoresist to form the desired pattern. As shown in Figure 1(e).

[0032] (f) Under the protection of the aforementioned photoresist 400, the thin film 300 is etched, for ...

Embodiment 2

[0041] The present invention also proposes a thin-film bulk acoustic resonator, including the wedge-shaped structure formed in embodiment 1, such as forming a cavity on the substrate, forming a bottom electrode of the wedge-shaped structure on the cavity, and further depositing a voltage on the bottom electrode. Electrical material layer, top electrode. Since the piezoelectric material layer and the top electrode layer are prepared on the wedge-shaped structure, defects such as cracks in the subsequently grown thin film layer are effectively avoided, and the performance and reliability of the device are greatly improved.

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Abstract

The invention proposes a preparation method of a wedge-shaped thin film for the defects in the prior art. The thin film with wedge-shaped edges can be prepared through correcting a commonly used graphical method, and angles of the wedge shape can be flexibly adjusted in a range from 0 to 90 degrees. The wedge-shaped thin film is formed by depositing a new thin film material on a thin film having small wedge angles, the new thin film material cannot crack and the like, thus the performance and reliability of a device are greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a wedge-shaped thin film. Background technique [0002] During the production and processing of semiconductor devices such as IC and MEMS, it is often necessary to deposit other thin film materials on a certain patterned thin film material. The film material is prepared by the commonly used patterning method, and its edge often presents a right angle of 90 degrees. When other film materials are deposited on the edge position, it is easy to cause cracks in the newly deposited film material, and the film defect is extremely large. Affect the performance and reliability of the device. The most typical example is that in the process of preparing a thin film bulk acoustic resonator, after depositing the lower electrode film of the thin film bulk acoustic resonator, it will be patterned to form the lower electrode, and then on the patterned lower elect...

Claims

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Application Information

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IPC IPC(8): H03H3/02H01L21/28
CPCH03H3/02H01L21/28H03H2003/023Y02D30/70
Inventor 王国浩张树民陈海龙汪泉
Owner HANGZHOU SAPPLAND MICROELECTRONICS TECH CO LTD
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