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Gallium sulfide quantum dot material and preparation method thereof

A quantum dot material, gallium sulfide technology, applied in the field of gallium sulfide quantum dot material and its preparation, can solve the problems of narrow fluorescent emission range, inability to obtain products, non-adjustable, etc., and achieve low cost, simple preparation method, and simple process Effect

Active Publication Date: 2019-02-26
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this product emits fluorescence under light excitation, both the preparation method and the product have shortcomings. First, the fluorescence emitted by the product comes from the rare earth element doped in it rather than the gallium sulfide matrix; second, the fluorescence emission range Too narrow and not tunable; again, the preparation method cannot obtain products with tunable fluorescence emitted by GaS over a wide range

Method used

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  • Gallium sulfide quantum dot material and preparation method thereof
  • Gallium sulfide quantum dot material and preparation method thereof
  • Gallium sulfide quantum dot material and preparation method thereof

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Embodiment 1

[0040] The concrete steps of preparation are:

[0041] Step 1, first mix the gallium source, sulfur source, octadecene and ligand at a molar ratio of 1:0.5:80:20; where the gallium source is gallium acetylacetonate, and the sulfur source is sulfur powder , the ligand is a mixture of oleic acid, n-dodecanethiol and oleylamine to obtain a mixed solution. The mixed solution was placed in an inert atmosphere at 100°C for 10 minutes, and then reacted at 220°C for 20 minutes in an inert atmosphere; wherein the inert atmosphere was an argon atmosphere to obtain a reaction solution.

[0042] Step 2, first according to the molar ratio of the gallium source in the reaction solution, the solvent and the precipitant is the ratio of 1:50:1400, add the solvent and the precipitant successively to the reaction solution cooled under the inert atmosphere; wherein, the solvent is n-ethyl Alkanes, the precipitating agent is ethanol, and a suspension is obtained. Then, the suspension is subjecte...

Embodiment 2

[0044] Step 1, first mix the gallium source, sulfur source, octadecene and ligand at a molar ratio of 1:2.5:65:40; where the gallium source is gallium acetylacetonate, and the sulfur source is sulfur powder , the ligand is a mixture of oleic acid, n-dodecanethiol and oleylamine to obtain a mixed solution. The mixture was placed in an inert atmosphere at 105° C. for 8.8 minutes, and then reacted at 240° C. for 15.5 minutes in an inert atmosphere; wherein the inert atmosphere was an argon atmosphere to obtain a reaction solution.

[0045] Step 2, first according to the molar ratio of the gallium source in the reaction solution, the solvent and the precipitant is the ratio of 1:113:1075, add the solvent and the precipitant successively to the reaction solution cooled under the inert atmosphere; wherein, the solvent is n-ethyl Alkanes, the precipitating agent is ethanol, and a suspension is obtained. Then the suspension is subjected to solid-liquid separation treatment; wherein, ...

Embodiment 3

[0047] Step 1, first mix the gallium source, sulfur source, octadecene and ligand at a molar ratio of 1:5:50:60; wherein the gallium source is gallium acetylacetonate, and the sulfur source is sulfur powder , the ligand is a mixture of oleic acid, n-dodecanethiol and oleylamine to obtain a mixed solution. The mixture was placed in an inert atmosphere at 110° C. for 7.5 minutes, and then reacted at 260° C. for 11 minutes in an inert atmosphere; wherein the inert atmosphere was an argon atmosphere to obtain a reaction solution.

[0048]Step 2, first according to the molar ratio of the gallium source in the reaction solution, the solvent and the precipitating agent is the ratio of 1:175:750, add the solvent and the precipitating agent successively in the reaction solution cooled under the inert atmosphere; wherein, the solvent is n-ethyl Alkanes, the precipitating agent is ethanol, and a suspension is obtained. Then, the suspension is subjected to solid-liquid separation treatme...

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Abstract

The invention discloses a gallium sulfide quantum dot material and a preparation method thereof. The material contains gallium sulfide quantum dots, the chemical formula is GaxS3, wherein x is more than or equal to 1 and less than or equal to 5, and the diameter of the gallium sulfide quantum dots of the chemical formula GaxS3 is 1-8 nm. The method comprises the steps of mixing a gallium source, asulfur source, octadecene and a ligand in a molar ratio of 1: (0.5-10): (20-80): (20-100) to obtain a mixed solution, then placing the mixed solution in an inert atmosphere, reacting at 220 to 300 DEG C for 2 to 20 min to obtain a reaction solution, sequentially adding a solvent and a precipitant to the reaction solution cooled in the inert atmosphere according to the molar ratio of 1: (50-300):(100-1400) of the gallium source, the solvent and the precipitant in the reaction solution to obtain a suspension, and performing solid-liquid separation on the suspension to obtain the gallium sulfide quantum dot material. The luminescent peak of the material under ultraviolet excitation is adjustable in the range of 420 to 505 nm, and the material can be widely and commercially applied in the fields of light-emitting devices, ion detection and the like.

Description

technical field [0001] The invention relates to a quantum dot material and a preparation method thereof, in particular to a gallium sulfide quantum dot material and a preparation method thereof. Background technique [0002] Quantum dots are zero-dimensional nanomaterials. As the size decreases, the material will exhibit special physical and chemical properties. This size effect makes quantum dots have some special properties different from macroscopic materials, and can be used in photodetection, solar cells, luminescent materials, and ion detection. field. [0003] Gallium sulfide is a group III-VI direct bandgap semiconductor material, which is mostly used as a matrix of rare earth luminescent materials and not directly as a luminescent material, such as the title "Photoluminescence of Ga 2 S 3 :Sm 2+ Crystals", InorganicMaterials, 2008, 44, 563 ("Photoluminescence of Samarium-doped Gallium Sulfide Crystals", "Inorganic Materials" 2008, Volume 44, page 563). The produ...

Claims

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Application Information

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IPC IPC(8): C09K11/62
CPCC09K11/621
Inventor 费广涛胡泽敏
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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