Silicon-base grated gate terahertz detector

Abstract

A silicon-base grated gate terahertz detector consists of a MOS transistor. The MOS transistor comprises a substrate layer. One end of the upper end surface of the substrate layer is provided with a source, and the other end of the upper end surface of the substrate layer is provided with a drain. A channel layer and an insulating layer are successively disposed from bottom to top on the upper endsurface of the substrate layer and between the source and the drain. The source and the drain are connected to the channel layer and the insulating layer. A gate of a grating structure is disposed onthe upper end surface of the insulating layer. The invention relates to the silicon-base grated gate terahertz detector. The grating structure is configured to couple a terahertz signal in space, anda gap of the grating structure is configured to diffract the terahertz signal, thereby increasing the local terahertz field strength. The gate of the NMOS / PMOS is prepared into the grating structureso as to effectively couple the terahertz signal in space to a transistor channel, and excite the plasma oscillation in the channel, thereby changing the current between the source and the drain, andrealizing the terahertz signal detection.

Description

technical field [0001] The invention relates to a terahertz detector. In particular, it relates to a silicon-based rasterized grid terahertz detector. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves (1THz=10 12 Hz), this band is in the submillimeter wave and far infrared band between microwave and infrared light, and belongs to the electromagnetic spectrum that has been less studied by previous researchers. The terahertz frequency band is a transitional frequency band from electronics to photonics, so it has many excellent characteristics, such as broadband, perspective, and safety. It has great application prospects in communication, chemistry, biology, medicine, security and other fields. [0003] Terahertz detectors are an important part of the application of terahertz technology. Terahertz detectors can be roughly divided into coherent detection and incoherent detection. Coherent detection mainly uses the terahertz time-domain spect...

AI Technical Summary

Problems solved by technology

Due to the limitations of the CMOS process, the on-chip antenna has problems such as large loss and low gain efficiency, and the thermal detection based on the CMOS process has problems such as absorption and low coupling efficiency.

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