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Gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof

A light-emitting diode, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of electron blocking layer affecting the expansion of holes, etc., to reduce series resistance, improve antistatic ability, antistatic ability strong effect

Active Publication Date: 2019-01-25
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that more defects in the electron blocking layer in the prior art will affect the expansion of holes

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  • Gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof
  • Gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof
  • Gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0031] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, an electron blocking layer 40 and a P-type semiconductor layer 50, an N-type semiconductor layer 20, an active layer 30, an electron blocking layer Layer 40 and P-type semiconductor layer 50 are sequentially stacked on substrate 10 .

[0032] figure 2 Schematic diagram of the structure of the electron blocking layer provided by the e...

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Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the field of semiconductor technology. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer, an electron blocking layer, and a P-type semiconductor layer, the N-type semiconductor layer,the active layer, the electron blocking layer and the P-type semiconductor layer are sequentially laminated on the substrate, The electron blocking layer includes a first sub-layer made of magnesiumdoped aluminum gallium nitride and a second sub-layer made of carbon doped aluminum gallium nitride, and at least one second sub-layer inserted in the first sub-layer. The thickness of the first sub-layer is greater than 1 / 2 of the thickness of the electron blocking layer. By inserting at least one carbon-doped aluminum gallium nitride layer into the magnesium-doped aluminum gallium nitride layer,the invention realizes the plane spreading of holes, reduces the series resistance of the electron blocking layer, and enhances the antistatic ability of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/32H01L33/00
CPCH01L33/0075H01L33/145H01L33/32
Inventor 葛永晖郭炳磊曹阳吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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