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3D memory device and manufacture method thereof

A storage device and manufacturing method technology, applied in the field of storage, can solve the problems that the metal wiring density affects the yield and reliability of 3D storage devices, etc., so as to improve storage density and access speed, reduce parasitic resistance and parasitic capacitance, and simplify manufacturing The effect of craft

Active Publication Date: 2019-01-25
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase in metal wiring density will affect the yield and reliability of 3D memory devices

Method used

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  • 3D memory device and manufacture method thereof
  • 3D memory device and manufacture method thereof
  • 3D memory device and manufacture method thereof

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Embodiment Construction

[0024] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0025] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0026] If it is to describe the situation directly on another layer or an...

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PUM

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Abstract

A 3D memory device and a method of manufacture that same are disclosed. The 3D memory device includes a laminated structure including a plurality of stacked gate conductors and a plurality of interlayer insulating layers; A plurality of channel columns penetrating the laminated structure; A plurality of bit lines and a common source line located on a surface of the laminated structure, one end ofthe channel post being connected to a corresponding bit line of the plurality of bit lines and the other end being connected to the common source line in common; Wherein the plurality of bit lines andthe common source lines are staggered on a surface of the laminated structure. The 3D memory device adopts common source lines and bit lines interleaved on the surface of the 3D memory device stack structure, and the interleaved wiring can use the common source lines between the bit lines to isolate the common source lines and the bit lines, thereby reducing parasitic capacitance and parasitic resistance, improving storage density and access speed, and improving yield and reliability of the 3D memory device.

Description

technical field [0001] The present invention relates to the technical field of memory, and more particularly, to a 3D memory device and a manufacturing method thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectivel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11582H10B43/27
CPCH10B43/27
Inventor 胡斌肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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