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A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film

A solar cell and passivation film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as cost reduction and efficiency increase, and achieve the effects of reducing current density, avoiding black hole residue, and controllable reaction speed

Inactive Publication Date: 2019-01-15
SHANGHAI SHENZHOU NEW ENERGY DEV
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Problems solved by technology

However, the expensive TMA consumption in the AlO deposition process faces the challenge of cost reduction and efficiency increase of current photovoltaic products

Method used

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  • A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film
  • A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film
  • A method for preparing a crystalline silicon solar cell having a polycrystalline silicon passivation film

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Embodiment Construction

[0027] The following will combine figure 1 The preparation method of the crystalline silicon solar cell provided with the polysilicon passivation film of the present invention will be further described in detail.

[0028] The preparation method of the crystalline silicon solar cell possessing the polysilicon passivation film of the present invention comprises the following steps:

[0029] 1) Carry out double-sided polishing to the silicon wafer;

[0030] Clean the silicon wafer in a mixed alkali solution of NaOH and NaClO to remove the surface damage layer and cutting line marks, and complete double-sided polishing;

[0031] The mixed alkali solution of NaOH and NaClO, the volume ratio of NaOH and NaClO is 3:1~1:1;

[0032] This step has both cleaning and polishing processes, which saves the pre-cleaning process and improves production capacity;

[0033] 2) Put the polished silicon chip into the metal salt solution to decorate the metal particles;

[0034] Preferably, the ...

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Abstract

A method for preparing a crystalline silicon solar cell with a polycrystalline silicon passivation film comprises: forming a nano-suede structure on the surface of a silicon wafer; Forming an emitteron the front surface of the silicon wafer; A one-step wet etching method is adopted to remove the phosphor-silicate glass and polish the back surface of the silicon wafer. On the back of the polishedsilicon wafer, SiO was deposited by LPCVD, SiO2 passivation layer was formed on the back of the silicon wafer, and then PolySi passivation layer was deposited on the back of the silicon wafer by LPCVD. SiNx passivation layer was deposited on silicon emitter and PolySi passivation layer by PECVD.

Description

technical field [0001] The invention relates to the preparation of a crystalline silicon solar cell, in particular to a method for preparing a crystalline silicon solar cell with a polycrystalline silicon passivation film. Background technique [0002] Due to the mature production process and low manufacturing cost, P-type polycrystalline silicon cells still occupy the vast majority of the market share at present and for a long period of time in the future. Following the guidelines issued by the State Council on the efficiency of monocrystalline cells greater than 20% and the efficiency of polycrystalline cells greater than 18% in the new production capacity of the photovoltaic industry, choose a solution that is easy to be compatible with existing scale production lines and easy to control production costs, and quickly update core technologies It is the general trend. If P-type crystalline silicon solar cells want to continue to maintain their competitiveness and achieve g...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0216H01L31/0236
CPCH01L31/02167H01L31/02363H01L31/068H01L31/1804H01L31/1868Y02E10/546Y02E10/547Y02P70/50
Inventor 张松李荣瑞梁小静刘慎思陶智华郑飞
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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