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A MOSFET device having a recessed drain structure with bidirectional level transfer

A groove type, drain technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of high breakdown characteristics and transmission characteristics of devices, no MOSFET, large threshold loss, etc., to improve gate control ability, ensure the surface breakdown electric field, and reduce the effect of on-resistance

Active Publication Date: 2019-01-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the MOSFETs for bidirectional level transmission are realized by n-channel enhanced Si MOS plus circuits, and no MOSFETs with bidirectional transmission characteristics have appeared yet.
Bidirectional level transmission through circuits has many disadvantages, such as high requirements on the breakdown characteristics and transmission characteristics of the devices participating in the transmission, or the threshold loss is relatively large when the circuit is simple, and the circuit is complicated when the threshold loss is controlled.

Method used

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  • A MOSFET device having a recessed drain structure with bidirectional level transfer
  • A MOSFET device having a recessed drain structure with bidirectional level transfer
  • A MOSFET device having a recessed drain structure with bidirectional level transfer

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Embodiment Construction

[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0026] This embodiment provides a MOSFET with bidirectional transmission characteristics with high switching frequency, low loss, high breakdown field strength and low on-resistance. Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0027] A MOSFET device with a groove-type drain structure for bidirectional level transmission, comprising: a p-type substrate 1, a p-type epit...

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Abstract

The present invention provides a MOSFET device having a recessed drain structure with bidirectional level transfer, comprises a p-type substrate, a p-type epitaxial layer, an n-type drift layer, a p-type body region, a groove first drain, a first drain N + implantation region, a groove second drain, a second drain N + implantation region, a groove gate, a gate oxide dielectric layer, a p-type lightly doped first RESURF region and a p-type lightly doped second RESURF region; The invention realizes the complete symmetrical structure of the MOSFET. On the premise of guaranteeing a certain depth of the gate electrode and the drain trench, the device can realize the bidirectional level transmission and reduce the unavoidable loss when the circuit is used for the bidirectional level transmission. By using groove technology, the gate control ability of the device is improved, the transmission distance of the carrier is reduced, the on-resistance is reduced, and the reliability of the device is improved. By using RESURF technology, the electric field of surface breakdown is ensured to be increased, and the on-resistance of the device is also reduced, which further improves the reliabilityof the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, in particular to a MOSFET device capable of bidirectional level transmission. Background technique [0002] LDMOS is a power device with a double diffusion structure, which has good thermal stability, frequency stability and withstand voltage characteristics, so LDMOS devices are especially suitable for CDMA, W-CDMA, TETRA, digital terrestrial television, etc. that require a wide frequency range , high linearity and high service life requirements. The device is implanted twice successively in the same source / drain region, one with a higher concentration of arsenic, and one with a lower concentration of boron, followed by a high-temperature boost process. Since boron diffuses faster than arsenic, the gate A channel with a concentration gradient is formed under the boundary. To increase the breakdown voltage, there is a drift region between the active and drain regions. The d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/41H01L29/417H01L29/78
CPCH01L29/41H01L29/41725H01L29/78
Inventor 李泽宏胡汶金欧阳钢任敏高巍张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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