A MOSFET device having a recessed drain structure with bidirectional level transfer
A groove type, drain technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of high breakdown characteristics and transmission characteristics of devices, no MOSFET, large threshold loss, etc., to improve gate control ability, ensure the surface breakdown electric field, and reduce the effect of on-resistance
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[0025] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0026] This embodiment provides a MOSFET with bidirectional transmission characteristics with high switching frequency, low loss, high breakdown field strength and low on-resistance. Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:
[0027] A MOSFET device with a groove-type drain structure for bidirectional level transmission, comprising: a p-type substrate 1, a p-type epit...
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