Semiconductor avalanche failure analyzing and testing method and device based on thermal imaging technology

Abstract

Disclosed is a semiconductor avalanche tolerance failure analyzing and testing method and device based on a thermal imaging technology. The semiconductor avalanche tolerance failure analyzing and testing method based on the thermal imaging technology mainly includes that, in a constructed test system, a to-be-tested power device and a power switch tube are turned on, an inductor starts to stream,the to-be-tested power device and the power switch tube are turned off after a current in the inductor reaches an avalanche current peak value Iav, the inductor discharges, and avalanche occurs in theto-be-tested power device, a short-circuit power device is turned on before the to-be-tested power device is broken through, the to-be-tested power device is subjected to a short circuit and the avalanche stops, energy of the inductor is discharged by the short-circuit power device, the operation is repeated afterwards, so that avalanche occurs continuously in the to-be-tested power device, the avalanche time of the device is limited so that an avalanche process is performed repeatedly without damaging the device, and in this process, changes of the locations of heating points during the avalanche process can be observed by the thermal imaging technology.

Description

technical field [0001] The invention belongs to the field of robustness of power semiconductors, and in particular relates to a testing method and device for semiconductor avalanche failure analysis based on thermal imaging technology. Background technique [0002] With the rapid development of semiconductors and the in-depth understanding of reliability and failure modes, chip design manufacturers have also brought new challenges, that is, in addition to continuously improving the fab process and packaging technology to pursue higher product performance, these Manufacturers also realize that although the continuous reduction of MOS size increases the number of transistors per unit area of ​​the chip, the current density will also increase, but the thermal breakdown caused by the increase in current is fatal to the device itself. Therefore, how to make products safer, more reliable, and have a longer life under the condition of ever-shrinking chip size has become a huge chal...

AI Technical Summary

Problems solved by technology

[0004] At present, the widely used method for testing the avalanche failure of power devices is to put the power devices in the inductive circuit to form a traditional avalanche withstand test circuit. The avalanche breakdown of the device during this process is used to release the energy stored in the inductive load. This method releases a large amount of energy in a short time, calculates the avalanche withstand capacity of the device through the waveform, and judges the breakdown of the device through the breakdown position after the device is damaged. Weak points, but this method can only observe the final breakdown point of the device, but cannot observe the transfer of the internal heating point of the device before failure

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