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Silicon carbide crystal rapid orientation method

A silicon carbide crystal and silicon carbide technology, which is applied in the field of rapid orientation of silicon carbide crystals, can solve the problems of long time consumption, cumbersome operability, low precision, etc., and achieve the effects of short time consumption, low operating requirements for personnel, and high precision

Active Publication Date: 2019-01-15
FUJIAN NORSTEL MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the deficiencies of the prior art, and provide a method for quickly orienting silicon carbide crystals, using the pre-cutting orienting jig to directly fix the silicon carbide crystal bar glued to the glass rod on the platform of the pre-cutting jig by glue Then, the platform on the jig before cutting can be moved horizontally and vertically through the combination of the screw on the jig before cutting, the worm wheel and the worm, so that the measurement of the horizontal and vertical angles of the silicon carbide ingot can be realized and orientation, which can solve the problems of cumbersome operability, low precision, and long time-consuming in the current orientation of silicon carbide ingots before cutting.

Method used

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  • Silicon carbide crystal rapid orientation method

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Embodiment 1

[0038]A method for quickly orienting silicon carbide crystals, using an orienting jig before cutting to control the vertical and horizontal movements of the upper platform and the lower platform, respectively, to fix the silicon carbide crystal rods in the vertical and horizontal directions, and realize the carbonization Measurement of the horizontal and vertical angles of silicon crystal rods; a method for rapid orientation of silicon carbide crystals, comprising the following steps:

[0039] S10, stick the silicon carbide ingot on the upper platform of the pre-cutting orienting fixture, and place it for 5 minutes. After the glue is cured, pass the pre-cutting orienting fixture of the bonded silicon carbide ingot through the screw and the pre-cutting orienting fixture The threaded hole is fastened on the X-Ray orientation instrument;

[0040] S20, adjust the adjustment screw on the upper platform to make the upper platform move in the vertical direction, and look for the high...

Embodiment 2

[0053] A method for quickly orienting silicon carbide crystals, using an orienting jig before cutting to control the vertical and horizontal movements of the upper platform and the lower platform, respectively, to fix the silicon carbide crystal rods in the vertical and horizontal directions, and realize the carbonization Measurement of the horizontal and vertical angles of silicon crystal rods; a method for rapid orientation of silicon carbide crystals, comprising the following steps:

[0054] S10, stick the silicon carbide ingot on the upper platform of the pre-cutting directional fixture, and place it for 8 minutes. After the glue is cured, pass the pre-cutting directional fixture of the bonded silicon carbide ingot through the screw and the pre-cutting directional fixture The threaded hole is fastened on the X-Ray orientation instrument;

[0055] S20, adjust the adjustment screw on the upper platform to make the upper platform move in the vertical direction, and look for t...

Embodiment 3

[0068] A method for quickly orienting silicon carbide crystals, using an orienting jig before cutting to control the vertical and horizontal movements of the upper platform and the lower platform, respectively, to fix the silicon carbide crystal rods in the vertical and horizontal directions, and realize the carbonization Measurement of the horizontal and vertical angles of silicon crystal rods; a method for rapid orientation of silicon carbide crystals, comprising the following steps:

[0069] S10, stick the silicon carbide ingot on the upper platform of the pre-cutting directional fixture, and place it for 6 minutes. After the glue is cured, pass the pre-cutting directional fixture of the bonded silicon carbide ingot through the screw and the pre-cutting directional fixture The threaded hole is fastened on the X-Ray orientation instrument;

[0070] S20, adjust the adjustment screw on the upper platform to make the upper platform move in the vertical direction, and look for t...

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PUM

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Abstract

The invention discloses a silicon carbide crystal rapid orientation method. By utilizing a pre-cutting orientation fixture, the silicon carbide crystal bar bonded with a glass rod is directly fixed onthe platform of the pre-cutting fixture through glue, and then screws on the pre-cutting fixture, a worm wheel and a worm are combined to realize the movement of the platform on the pre-cutting fixture in the horizontal and vertical directions, so that the angle measurement and the orientation of the silicon carbide crystal bar in the horizontal and vertical directions can be realized, and the problems of complex operability, low precision, long time consumption of the orientation of the silicon carbide crystal bar before cutting can be solved, and the method is advantageous in that the operation is simple, the time consumption is short, the efficiency is high, the operation requirement for personnel is low, the precision is high, the glass rod is not needed to be grinded on a grinding machine, and the cost is low.

Description

technical field [0001] The invention relates to the technical field of crystal processing, in particular to a method for rapid orientation of silicon carbide crystals. Background technique [0002] As a third-generation semiconductor material, silicon carbide has rapidly penetrated into every corner of lighting, power devices, microwave radio frequency and other fields in recent years. It has a wide range of application markets in the fields of LCD backlight, automotive lights, decorative lights, general lighting, electric vehicles, 5G applications, etc., and has become one of the directions for the development of new energy in the future. [0003] However, as an epitaxial substrate, silicon carbide material needs to have high requirements on its surface. In the process of epitaxial crystallization, the bias of the substrate wafer angle will affect the defect density of the epitaxial high temperature growth film growth. and quality. The abnormality of the angle will cause ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D7/00B28D7/04B28D5/04
CPCB28D5/0058B28D5/0088B28D5/045
Inventor 苏双图张洁林武庆赖柏帆
Owner FUJIAN NORSTEL MATERIAL TECH CO LTD
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