A method for improving the filling capacity of a deep trench

A technology with filling ability and deep grooves, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as early filling sealing, impact on device electrical performance and reliability, and insufficient filling, so as to reduce the difficulty of filling , to achieve the effect of completeness and convenient filling

Inactive Publication Date: 2019-01-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

The existing filling technology, whether it is filled by chemical deposition or material growth, encounters the phenomenon of insufficient filling or early sealing of the filling when encountering trenches with large aspect ratios, resulting in electrical failure of the device. Performance and reliability suffer

Method used

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  • A method for improving the filling capacity of a deep trench
  • A method for improving the filling capacity of a deep trench
  • A method for improving the filling capacity of a deep trench

Examples

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Embodiment Construction

[0019] combine Figure 6 As shown, the method for improving deep trench filling capability, in the following examples, the implementation process is as follows:

[0020] Step 1. In figure 1 The already formed deep trenches are filled as shown. The deep trench refers to a deep trench with an aspect ratio greater than 5:1. A in the figure represents the height of the deep groove (ie, the depth of the groove), and b represents the width of the deep groove.

[0021] Step 2. Stop filling when the deep trench is filled to about half of the required time. The deep trench filling described above is only aimed at the length and width structure of the trench, and does not limit the material and filling material of the trench. It can be a silicon trench, or a trench of other materials used in semiconductor processing, and the filling material is also the material used in the normal filling process, such as epitaxy, polysilicon, etc. The stop time on the way is about half of the time...

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Abstract

The invention discloses a method for improving the filling capacity of a deep trench. Step 1, filling the formed deep trench; 2, when filling to half of the filling time required to fill the deep trench, stopping the filling first; 3, carrying out vertical implantation on the surface of the deep trench; 4, etching the surface of the injected filling material to increase the opening angle of the deep trench; and Step 5: continuing filling the deep trench in the reworked opening to complete the trench filling. The invention can realize the integrity of deep trench filling.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for improving deep trench filling capability. Background technique [0002] In the existing semiconductor processing field, the problem of filling deep trenches (aspect ratio exceeding 5:1) is often encountered. The existing filling technology, whether it is filled by chemical deposition or material growth, encounters the phenomenon of insufficient filling or early sealing of the filling when encountering trenches with large aspect ratios, resulting in electrical failure of the device. Performance and reliability are affected. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a method for improving the deep trench filling ability, which can realize the integrity of deep trench filling. [0004] In order to solve the above-mentioned technical problems, the method for improving deep trench filli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/265H01L21/306
CPCH01L21/2003H01L21/2022H01L21/26586H01L21/30604
Inventor 姚亮王飞
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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