Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of blsfmc/cmfo thin film with resistive switching effect and preparation method thereof

A technology of resistive switch and thin film, applied in the field of BLSFMC/CMFO thin film and its preparation, can solve the problems of difficult to meet strong magnetoelectric coupling, difficult to obtain, high residual polarization value, etc.

Active Publication Date: 2021-06-29
SHAANXI UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, BiFeO 3 The volatilization of bismuth element in thin film and part of Fe 3+ to Fe 2+ The transformation, so that more oxygen vacancies are generated in the film, resulting in BiFeO 3 Thin film has serious electric leakage phenomenon and large coercive field, it is difficult to polarize, and it is difficult to obtain high remanent polarization value, so it is limited in practical application
In addition, BiFeO 3 The presence of weak ferromagnetism in thin films makes it difficult to meet the strong magnetoelectric coupling required for next-generation memory devices and other multifunctional devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of blsfmc/cmfo thin film with resistive switching effect and preparation method thereof
  • A kind of blsfmc/cmfo thin film with resistive switching effect and preparation method thereof
  • A kind of blsfmc/cmfo thin film with resistive switching effect and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The BLSFMC / Co 1-x mn x Fe 2 o 4 The preparation method of composite film, comprises the following steps:

[0036] Step 1: Add Co(NO 3 ) 2 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Fe(NO 3 ) 3 9H 2 O is (1-x) in molar ratio: x: 2 is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride, stirs evenly, obtains Co 1-x mn x Fe 2 o 4 Precursor;

[0037] Step 2: Coating Co on the FTO / Glass substrate by spin coating method 1-x mn x Fe 2 o 4 Precursor, get Co 1- x mn x Fe 2 o 4 Wet film, the wet film is baked at 195-200°C to obtain a dry film after uniform glue, and then annealed at 550-600°C to obtain crystalline Co 1-x mn x Fe 2 o 4 film;

[0038] Step 3: To be crystalline Co 1-x mn x Fe 2 o 4 After natural cooling of the film, the crystalline Co 1-x mn x Fe 2 o 4 Repeat step 2 on the film to reach the desired thickness, that is, to obtain Co 1-x mn x Fe 2 o 4 film;

[0039] Step 4: Bi(NO 3 ) 3 ·5H 2 O, La(NO...

Embodiment 1

[0051] Step 1, Co(NO 3 ) 2 ·6H 2 O and Fe(NO 3 ) 3 9H 2 O is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride at a molar ratio of 1:2, and stirred evenly for 2 hours to obtain CoFe 2 o 4 Precursor, CoFe 2 o 4 The concentration of metal ions in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0052] Step 2, spin coating CoFe on FTO / Glass substrate by spin coating method 2 o 4 Precursor solution, the homogenization speed is 4000r / min, the homogenization time is 15s, and the CoFe 2 o 4 Wet film, bake the wet film at 200°C for 8 minutes to obtain a dry film, and then anneal at 600°C for 30 minutes to obtain crystalline CoFe 2 o 4 film;

[0053] Step 3, to be crystalline CoFe 2 o 4 After natural cooling of the film, the crystalline CoFe 2 o 4 Repeat step 2 on the film to achieve the desired thickness, that is, to obtain CoFe 2 o 4 film;

[0054] Step 4, th...

Embodiment 2

[0058] Step 1, Co(NO 3 ) 2 ·6H 2 O, C 4 h 6 MnO 4 4H 2 O and Fe(NO 3 ) 3 9H2 O is dissolved in the mixed solution of ethylene glycol methyl ether and acetic anhydride with a molar ratio of 0.8:0.2:2, and stirred evenly for 2h to obtain Co 0.8 mn 0.2 Fe 2 o 4 Precursor, Co 0.8 mn 0.2 Fe 2 o 4 The concentration of metal ions in the precursor solution is 0.3mol / L, and the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0059] Step 2, Spin Coating Co on FTO / Glass Substrate by Spin Coating 0.8 mn 0.2 Fe 2 o 4 Precursor solution, the homogenization speed is 4000r / min, the homogenization time is 15s, and the Co 0.8 mn 0.2 Fe 2 o 4 Wet film, bake the wet film at 200°C for 8 minutes to obtain a dry film, and then anneal at 600°C for 30 minutes to obtain crystalline Co 0.8 mn 0.2 Fe 2 o 4 film;

[0060] Step 3, to be crystalline Co 0.8 mn 0.2 Fe 2 o 4 After natural cooling of the film, the crystalline Co 0.8 mn 0.2 Fe 2 o 4 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a BLSFMC / CMFO film with a resistance switching effect and a preparation method thereof, comprising an upper film and a bottom film compounded together; the chemical formula of the bottom film is Co 1‑ x mn x Fe 2 o 4 , which is a twisted cubic inverse spinel structure, the space group is Fd3m; the chemical formula of the upper layer is Bi 0.79 La 0.18 Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 , which is a distorted rhombohedral perovskite structure, space group R3c; wherein, x=0˜0.8. It is prepared by sol-gel method and layer-by-layer annealing process. The present invention through the BiFeO 3 Doping the thin film improves the ferroelectric properties, by doping BiFeO 3 Thin film composite CoFe 2 o 4 The magnetic layer realizes the resistive switching effect of the ferroelectric / ferromagnetic composite thin film regulated by ferroelectric polarization.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a BLSFMC / CMFO film with resistance switching effect and a preparation method thereof. Background technique [0002] As a new multifunctional material, multiferroic materials have broad application prospects in storage devices, sensors, and nonvolatile memories. Since the polarization reversal speed of multiferroic materials under the action of an external field is very fast, usually reaching two ns levels, ferroelectric memory (FeRAM) has the advantage of high-speed reading and writing. In addition, since the ferroelectric material itself is a highly insulating dielectric material, no large current passes through the material itself during the reading and writing process, and the material has excellent fatigue resistance, and the reading and writing times can reach 10 14 above. BiFeO 3 (BFO for short) is currently the only multiferroic material that exists both ferroelectrici...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417
Inventor 谈国强刘云郭美佑薛敏涛任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com