A pulsed magnetic filter deposition device

A deposition device and pulsed magnetic technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of complex ion valence state, inapplicability, random direction of movement, etc., and achieve the effect of low deposition rate

Active Publication Date: 2020-11-24
BEIJING NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difference from the MEVVA source is that the energy of the ion beam in the pulsed magnetic filter deposition device is relatively low at 20-100eV, which cannot achieve ion implantation and cannot be used for ion implantation surface modification of semiconductor materials
The ions in the plasma formed by the traditional pulse magnetic filter device have complex valence states and random motion directions; it is not suitable for some precision coating fields that are sensitive to energy and direction

Method used

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  • A pulsed magnetic filter deposition device
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Examples

Experimental program
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Effect test

Embodiment 1

[0035] The trigger voltage is 5KV, the trigger frequency is 12Hz, and the pulse width is 100μs;

[0036] The lead-out electrode is 30mm away from the cathode surface;

[0037] The geometric center radius of the magnetic filter pipe is 160mm, the diameter is 80mm, and the magnetic filter angle is 90 degrees;

[0038] Transition line package: pass in a constant DC, the current intensity is 8A;

[0039] Bending wire package: pass in a strong pulse current, the current intensity is 80A, the pulse frequency is 8KHz, and the pulse width is 6000μs;

[0040] Focusing wire package: current intensity 1-100A, frequency 1-100Hz;

[0041] Grid: the size is Φ80mm, the grid aperture is Φ8mm, and the grid applies a negative pressure of 600V;

[0042] Quadrupole filter: filter DC voltage 400V, AC voltage 380V, frequency 5MHz.

Embodiment 2

[0044] The trigger voltage is 5KV, the trigger frequency is 12Hz, and the pulse width is 100μs;

[0045] The lead-out electrode is 30mm away from the cathode surface;

[0046] The geometric center radius of the magnetic filter pipe is 160mm, the diameter is 80mm, and the magnetic filter angle is 90 degrees;

[0047] Transition line package: pass in a constant DC, the current intensity is 8A;

[0048] Bending wire package: pass in a strong pulse current, the current intensity is 80A, the pulse frequency is 8KHz, and the pulse width is 6000μs;

[0049] Focusing wire package: current intensity 1-100A, frequency 1-100Hz;

[0050] Grid: the size is Φ80mm, the grid aperture is Φ10mm, and the grid applies a negative pressure of 600V;

[0051] Quadrupole filter: filter DC voltage 200V, AC voltage 380V, frequency 8MHz.

Embodiment 3

[0053] The trigger voltage is 5KV, the trigger frequency is 12Hz, and the pulse width is 100μs;

[0054] The lead-out electrode is 30mm away from the cathode surface;

[0055] The radius of curvature of the geometric center of the magnetic filter pipeline is 160mm, the diameter is Φ80mm, and the magnetic filter angle is 90 degrees; the transition line package: a constant DC is connected, and the current intensity is 8A;

[0056] Bending wire package: pass in a strong pulse current, the current intensity is 80A, the pulse frequency is 8KHz, and the pulse width is 6000μs;

[0057] Focusing wire package: current intensity 1-100A, frequency 1-100Hz;

[0058] Grid: the size is Φ80mm, the grid aperture is Φ10mm, and the grid applies a negative pressure of 300V;

[0059] Quadrupole filter: filter DC voltage 200V, AC voltage 380V, frequency 12MHz.

[0060] Figure 2-4 These are the optical topography diagrams of the metal nitride coatings prepared under the conditions of the three...

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Abstract

The invention discloses a pulsed magnetic filtering device which comprises a pulsed cathode arc head, an extraction electrode, a focusing straight pipe, a magnetic filtering pipe, a grid mesh and a radio frequency quadrupole filter. By implementing the pulsed magnetic filtering device, ions reaching the surface of a coated workpiece are good in directionality; meanwhile, the charge states of the ions are the same, and thus the pulsed magnetic filtering device is very suitable for refined adjusting and controlling growing of single-crystal films or poly-crystal films; and meanwhile, selective precise plating of the ion films with different valence states can be achieved conveniently by controlling the radio frequency of the quadrupole filter. The pulsed magnetic filtering device has the wide application prospects in preparation of ultrafine and ultra-micro chips or wafer seed crystals.

Description

technical field [0001] The invention proposes a pulse magnetic filter deposition device for solving the problem of fine and atomic-level controllable coating. [0002] technical background [0003] Metal vapor vacuum arc ion source (Metal Vapor Vacuum Arc), referred to as MEVVA source. This technology was developed in the mid-1980s by Brown, Adler and Burkhart of the University of California, Berkeley, for the needs of nuclear physics research. Because the MEVVA source can generate ion beams of various high-current metals and conductive compounds, it has the characteristics of strong beam current, various types of ions, high purity, high charge state, high extraction voltage and large-area extraction through holes. Using these ion beams can improve And improve the performance of metal material surface wear resistance, high temperature oxidation resistance, corrosion resistance and reduce surface friction coefficient. It can also improve the welding performance of ceramic and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/32
CPCC23C14/325
Inventor 廖斌欧阳晓平罗军庞盼左帅张旭吴先映张丰收韩然
Owner BEIJING NORMAL UNIVERSITY
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